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기능 U-Series IGBT IPMs
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7MBP100RUA060 데이터시트, 핀배열, 회로
U-series of IGBT-IPMs (600 V)
Kiyoshi Sekigawa
Hiroshi Endo
Hiroki Wakimoto
1. Introduction
Intelligent power modules (IPMs) are intelligent
power devices that incorporate drive circuits, protec-
tion circuits or other functionality into a modular
configuration. IPMs are widely used in motor driving
(general purpose inverter, servo, air conditioning,
elevator, etc.) and power supply (UPS, PV, etc.)
applications.
The equipment that uses these IPMs are required
to have small size, high efficiency, low noise, long
service life and high reliability.
In response to these requirements, in 1997, Fuji
Electric developed the industry’s first internal over-
heat protection function for insulated gate bipolar
transistors (IGBTs) and developed an R-IPM series
that achieved high reliability by employing an all-
silicon construction that enabled a reduction in the
number of components used.
Then in 2002, Fuji Electric changed the structure of
its IGBT chips from the punch through (PT) structure,
which had been in use previously, to a non-punch
through (NPT) structure, for which lifetime control is
unnecessary, in order to realize lower turn-off loss at
high temperature, and also established finer planar gate
and thin wafer processing technology to develop an R-
IPM3 series that realizes low conduction loss.
With the goal of reducing loss even further, Fuji
Electric has developed an IGBT device that employs a
trench NPT structure to realize lower conduction loss
and has developed a new free wheeling diode (FWD)
structure to improve the tradeoff between switching
noise and loss. Both of these technologies are incorpo-
rated into Fuji Electric’s newly developed U-series
IGBT-IPM (U-IPM) which is introduced below.
2. U-IPM Development Concepts and Product
Line-up
The concepts behind the development of the U-IPM
are listed below.
(1) Realization of lower loss
Lower loss can be realized by developing new
power elements and optimizing the drive performance.
Increasing the carrier frequency of the equipment
contributes to improved control performance. Also,
larger output can be obtained from the equipment
during the operation at the same carrier frequency.
(2) Continued use of the same package as prior
products
Table 1 Product line-up, characteristics and internal functions of the U-IPM series
Inverter part Brake part
Internal function
No. of
elements
Model
VDC VCES
(V) (V)
IC
(A)
PC
(W)
IC
PC
Both upper and
lower arms
Upper arm Lower arm
Package
type
(A) (W)
Dr UV TjOH OC ALM OC ALM TcOH
6MBP 20RUA060
20 84 –
– Yes Yes Yes None None Yes Yes None P619
6MBP 50RUA060
50 176 –
– Yes Yes Yes Yes None Yes Yes Yes
P610
6 in 1 6MBP 80RUA060 450 600 80 283 –
– Yes Yes Yes Yes None Yes Yes Yes
P610
6MBP100RUA060
100 360 –
– Yes Yes Yes Yes None Yes Yes Yes
P611
6MBP160RUA060
160 431 –
– Yes Yes Yes Yes None Yes Yes Yes
P611
7MBP 50RUA060
50 176 30 120 Yes Yes Yes Yes None Yes Yes Yes
P610
7MBP 80RUA060
80 283 50 176 Yes Yes Yes Yes None Yes Yes Yes
7 in 1
450 600
7MBP100RUA060
100 360 50 176 Yes Yes Yes Yes None Yes Yes Yes
P610
P611
7MBP160RUA060
160 431 50 176 Yes Yes Yes Yes None Yes Yes Yes
P611
Dr: IGBT driving circuit, UV : Under voltage lockout for control circuit, TjOH: Device overheat protection, OC: Over-current protection, ALM: Alarm output,
TcOH: Case temperature over-heat protection
*6MBP20RUA060 uses a shunt resistance-based over-current detection method at the N line.
48 Vol. 51 No. 2 FUJI ELECTRIC REVIEW
Free Datasheet http://www.datasheet4u.net/




7MBP100RUA060 pdf, 반도체, 판매, 대치품
Fig.7 Characteristics of turn-on waveform and emission noise
VGE
VCE
Low noise
IC
Fig.8 Emission noise
Measurement conditions: Distance between servo amplifier and
antenna is 2 m, vertical direction, standby state
100
50
Low loss
t1 t2
t1 : Time from IC = 0 until IC = ICP
t2 : Time from IC = ICP until VCE = 0
di /dt is small and t1 is long low emission noise
dv/dt is large and t2 is short low loss
30
100
80
Frequency (MHz)
(a) R-IPM3 (150RTB)
130
Table 3 Characteristics of gate resistance and turn-on
waveform
Turn-on Turn-on
di/dt dv/dt
Loss
Emission
noise
Gate
High Low
resistance RG Low High
Low Increases Decreases
High Decreases Increases
loss, which accounts for a large percentage of the
switching loss of the R-IPM3. Each type of loss
reduction is described below.
4.2 Reduction of conduction loss
Figure 6 shows IC-VCE(sat) characteristics for U-
IPM, R-IPM3 and R-IPM devices. It can be seen that
when IC = 150 A, the VCE(sat) of the U-IPM is 0.45 V
less than that of the R-IPM and 0.55 V less than that
of the I-RPM3. This is the VCE(sat) reduction effect due
to the trench IGBT described in chapter 3.
4.3 Turn-on loss and emission noise
Figure 7 shows a schematic drawing of the current
( IC) and voltage (VCE) at the time when the device is
turned on. As can be seen in the figure, typically, loss
can be reduced by making dv/dt larger and emission
noise can be reduced by making di/dt smaller. Howev-
er, in the case where turn-on operation is controlled by
the typical method of gate resistance only, there is a
tradeoff relation as shown in Table 3, and it is difficult
to establish both high dv/dt and low di/dt simulta-
neously.
In the newly developed U-IPM, the following two
techniques suppress the emission noise that usually
increases when gate resistance is decreased and di/dt
is increased, thereby enabling di/dt to be increased and
turn-on loss to be decreased without any increase in
50
30 80 130
Frequency (MHz)
(b) U-IPM (160RUA)
the emission noise.
(1) Application of the new soft recovery FWD sup-
presses dv/dt.
(2) The capacitance between the gate and emitter is
optimized in order to reduce di /dt, which in-
creased as a result of the lower gate resistance,
without reducing dv/dt
Through application of the above techniques, even
if currents of all sizes are controlled with the same
gate resistance, emission noise will be maintained at
the same level as that of the R-IPM3 as shown in
Fig. 8, and lower loss can be realized. Accordingly, the
total loss generated in all these products is linearly
proportional to the current, and the total loss and
temperature rise that occur during actual use can
easily be estimated.
5. Conclusion
Fuji Electric’s 600 V U-IPM that uses a U-series
IGBT chip having a trench NPT structure has been
described above. This U-IPM provides suitable perfor-
mance to satisfy the marketplace in which lower loss is
required. In the future, Fuji Electric intends to
continue to develop new IPMs that will satisfy market
requirements.
U-series of IGBT-IPMs (600 V)
51
Free Datasheet http://www.datasheet4u.net/

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7MBP100RUA060

U-Series IGBT IPMs

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