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PDF HGTP20N60C3R Data sheet ( Hoja de datos )
| Número de pieza | HGTP20N60C3R | |
| Descripción | 40A/ 600V/ Rugged UFS Series N-Channel IGBTs | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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HGTG20N60C3R, HGTP20N60C3R,
S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS
January 1997
40A, 600V, Rugged UFS Series N-Channel IGBTs
Features
• 40A, 600V TJ = 25oC
• 600V Switching SOA Capability
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns
• Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10µs
• Low Conduction Loss
Description
This family of IGBTs was designed for optimum performance
in the demanding world of motor control operation as well as
other high voltage switching applications. These devices
demonstrate RUGGED performance capability when
subjected to harsh SHORT CIRCUIT WITHSTAND TIME
(SCWT) conditions. The parts have ULTRAFAST (UFS)
switching speed while the on-state conduction losses have
been kept at a low level.
Ordering Information
PART NUMBER
HGTP20N60C3R
HGTG20N60C3R
HGT1S20N60C3R
HGT1S20N60C3RS
PACKAGE
TO-220AB
TO-247
TO-262AA
TO-263AB
BRAND
20N60C3R
20N60C3R
20N60C3R
20N60C3R
The electrical specifications include typical Turn-On and
Turn-Off dv/dt ratings. These ratings and the Turn-On ratings
include the effect of the diode in the test circuit (Figure 16).
The data was obtained with the diode at the same TJ as the
IGBT under test.
Formerly Developmental Type TA49047.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3RS9A.
G
E
Packaging
JEDEC STYLE TO-247
E
C
G
JEDEC TO-220AB (ALTERNATE VERSION)
E
C
G
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
M A (FLANGE)
JEDEC TO-262AA
EC
G
G
E
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-3
File Number 4226.1
1 page  
HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS
Typical Performance Curves (Continued)
4500
4000
3500
FREQUENCY = 1MHz
CIES
3000
2500
2000
1500
1000
500
0
0
COES
CRES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
IG REF = 1.376mA, RL = 30Ω, TC = 25oC
600
VCE = 600V
480
15
12
360 9
VCE = 200V
240 VCE = 400V 6
120 3
00
0 10 20 30 40 50 60 70 80 90
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
100
0.5
10-1
0.2
0.1
0.05
0.02
10-2
0.01
SINGLE PULSE
10-3
10-5
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
101
Test Circuit and Waveform
RG = 10Ω
L = 1mH
RURP1560
+
VDD = 480V
-
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
ICE
10%
EOFF EON
90%
10%
tD(OFF)I tFI
tRI
tD(ON)I
FIGURE 17. SWITCHING TEST WAVEFORMS
5-7
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HGTP20N60C3R.PDF ] | |
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