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PDF BD501 Data sheet ( Hoja de datos )
| Número de pieza | BD501 | |
| Descripción | Silicon NPN Power Transistors | |
| Fabricantes | INCHANGE | |
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Hay una vista previa y un enlace de descarga de BD501 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD501/B
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 50V(Min)
80V(Min)
·High Power Dissipation
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
BD501
BD501B
55
85
V
VCEO
Collector-Emitter Voltage
BD501
BD501B
50
80
V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
10 A
75 W
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.39 ℃/W
isc website：www.iscsemi.cn
1
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BD501.PDF ] | |
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