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PDF HGTP3N60A4D Data sheet ( Hoja de datos )
| Número de pieza | HGTP3N60A4D | |
| Descripción | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
HGT1S3N60A4DS, HGTP3N60A4D
January 2000
File Number 4818
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S3N60A4DS
TO-263AB
3N60A4D
HGTP3N60A4D
TO-220AB
3N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.
Symbol
C
G
E
Features
• >100kHz Operation At 390V, 3A
• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.intersil.com
Packaging
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,888,627
4,684,413
4,809,045
4,890,143
4,694,313
4,809,047
4,901,127
4,717,679
4,810,665
4,904,609
4,743,952
4,823,176
4,933,740
4,783,690
4,837,606
4,963,951
4,794,432
4,860,080
4,969,027
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1 page  
HGT1S3N60A4DS, HGTP3N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
16
RG = 50Ω, L = 1mH, VCE = 390V
12
TJ = 25oC, TJ = 125oC, VGE = 12V
8
TJ = 25oC, TJ = 125oC, VGE = 15V
4
01 2 3 4 5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
6
32
RG = 50Ω, L = 1mH, VCE = 390V
28
24 TJ = 25oC OR TJ = 125oC, VGE = 12V
20
16
12
8 TJ = 25oC OR TJ = 125oC, VGE = 15V
41 2 3 4 5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
6
112
104
96 VGE = 12V, TJ = 125oC
VGE = 15V, TJ = 125oC
88
80 VGE = 15V, TJ = 25oC
72
VGE = 12V, TJ = 25oC
64
56
48
1
RG = 50Ω, L = 1mH, VCE = 390V
2345
ICE, COLLECTOR TO EMITTER CURRENT (A)
6
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
96
RG = 50Ω, L = 1mH, VCE = 390V
88
TJ = 125oC, VGE = 12V OR 15V
80
72
64
56
48 TJ = 25oC, VGE = 12V OR 15V
40
123456
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
20
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
16
12
8
TJ = 25oC
4
TJ = 125oC
TJ = -55oC
0 4 6 8 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
14
16
IG(REF) = 1mA, RL = 100Ω, TJ = 25oC
14
12 VCE = 600V
10
8 VCE = 400V
VCE = 200V
6
4
2
0 0 4 8 12 16 20
QG, GATE CHARGE (nC)
24
FIGURE 14. GATE CHARGE WAVEFORMS
28
5
5 Page | ||
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| PDF Descargar | [ Datasheet HGTP3N60A4D.PDF ] | |
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