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PDF K2341 Data sheet ( Hoja de datos )
| Número de pieza | K2341 | |
| Descripción | MOSFET ( Transistor ) - 2SK2341 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2341
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2341 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
• Low On-state Resistance
RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A)
• LOW Ciss Ciss = 1090 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
250
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±11
A
Drain Current (pulse)
ID (pulse)* ±44
A
Total Power Dissipation (TC = 25 °C) PT1
35 W
Total Power Dissipation (Ta = 25 °C) PT2
2.0 W
Storage Temperature
Tstg –55 to +150 °C
Channel Temperature
Tch 150 °C
Single Avalanche Current
IAS**
11
A
Single Avalanche Energy
EAS** 320
mJ
*PW ≤ 10 µs, Duty Cycle ≤ 1 %
**Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeters)
10.0 ± 0.3
φ3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
123
0.7 ± 0.1
2.54 TYP.
1.3 ± 0.2 0.65 ± 0.1
1.5 ± 0.2
2.54 TYP.
2.5 ± 0.1
123
1. Gate
2. Drain
3. Source
MP-45F(SIOLATED TO-220)
Drain (D)
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
Gate (G)
Body diode
Source (S)
Document No. TC-2511
(O.D. No. TC–8070)
Date Published January 1995 P
Printed in Japan
©
1995
Free Datasheet http://www.Datasheet-PDF.com/
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.6
ID = 8.0 V
VGS = 10 V
0.5
0.4
0.3
0.2
0.1
0
–50
0
50 100 150
Tch - Channel Temperature - °C
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
100
Coss
10
1.0
Crss
10 100
VDS - Drain to Source Voltage - V
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
250 12
ID = 11 A
200 VDD = 200 V
125 V
50 V
150
VGS
10
8
6
100
4
50 VDS
2
00
0 10 20 30
Qg - Gate Charge - nC
2SK2341
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
10 V
VGS = 0
1.0
0.1
0 0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
100
10
0.1
0.1
tr
td (off)
tf
td (on)
VDS = 125 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
1000
REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
100
0.1
1.0 10
Diode Forward Current - A
100
5
Free Datasheet http://www.Datasheet-PDF.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2341.PDF ] | |
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