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부품번호 HGTP3N60B3D 기능
기능 7A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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HGTP3N60B3D 데이터시트, 핀배열, 회로
Data Sheet
HGTP3N60B3D, HGT1S3N60B3DS
January 2000 File Number 4414.1
7A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25oC and
150oC. The diode used in anti-parallel with the IGBT is the
RHRD460. The IGBT used is TA49192.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49193.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP3N60B3D
TO-220AB
G3N60B3D
HGT1S3N60B3DS
TO-263AB
G3N60B3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60B3DS9A.
Symbol
C
G
E
Features
• 7A, 600V TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• Related Literature
• TB334 “Guidelines for Soldering Surface Mount
- Components to PC Boards
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
ECG
TO-263, TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000




HGTP3N60B3D pdf, 반도체, 판매, 대치품
HGTP3N60B3D, HGT1S3N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
200
TJ = 150oC, RG = 82, L = 1mH, VCE = 480V
100 TC VGE
75oC 15V
75oC 10V
110oC 15V
110oC 10V
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
1 RØJC = 3.75oC/W, SEE NOTES
1234567
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
16
VCE = 360V, RG = 82, TJ = 125oC
14
12
45
40
ISC
35
10 30
8 25
tSC
6 20
4 15
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
14
DUTY CYCLE <0.5%, VGE = 10V
12 PULSE DURATION = 250µs
TC = -55oC
10
TC = 150oC
8
6
TC = 25oC
4
2
0
0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
30
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
25
TC = -55oC
20
15 TC = 150oC
10
TC = 25oC
5
0
0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0.7
RG = 82, L = 1mH, VCE = 480V
0.6 TJ = 25oC, TJ = 150oC, VGE = 10V
0.5
0.4
0.3
0.2
0.1
0
1
VGE = 15V, TJ = 150oC, TJ = 25oC
2345678
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
0.6
RG = 82, L = 1mH, VCE = 480V
0.5
TJ = 150oC; VGE = 10V OR 15V
0.4
0.3
0.2
0.1
0
1
TJ = 25oC; VGE = 10V OR 15V
234567
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4

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HGTP3N60B3D 전자부품, 판매, 대치품
HGTP3N60B3D, HGT1S3N60B3DS
Test Circuit and Waveforms
HGTP3N60B3D
RG = 82
L = 1mH
DUT +
-
VDD = 480V
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
ICE
EOFF
10%
EON
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 20. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no
damage problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26™” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 20.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 20. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
7 ECCOSORBDis a Trademark of Emerson and Cumming, Inc.

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관련 데이터시트

부품번호상세설명 및 기능제조사
HGTP3N60B3

7A/ 600V/ UFS Series N-Channel IGBTs

Intersil Corporation
Intersil Corporation
HGTP3N60B3D

7A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Intersil Corporation
Intersil Corporation

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