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HGTP3N60C3 데이터시트 PDF




Intersil Corporation에서 제조한 전자 부품 HGTP3N60C3은 전자 산업 및 응용 분야에서
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부품번호 HGTP3N60C3 기능
기능 6A/ 600V/ UFS Series N-Channel IGBTs
제조업체 Intersil Corporation
로고 Intersil Corporation 로고


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HGTP3N60C3 데이터시트, 핀배열, 회로
Data Sheet
HGTD3N60C3S, HGTP3N60C3
January 2000 File Number 4139.5
6A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49113.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60C3S
TO-252AA
G3N60C
HGTP3N60C3
TO-220AB
G3N60C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.,
HGTD3N60C3S9A.
Symbol
C
G
E
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
COLLECTOR
(FLANGE)
G
E
JEDEC TO-220AB
EC
G
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000




HGTP3N60C3 pdf, 반도체, 판매, 대치품
HGTD3N60C3S, HGTP3N60C3
Typical Performance Curves (Continued)
20
TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
VGE = 10V
10
500 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
400
VGE = 15V
300
VGE = 15V
3
123 4567
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
8
80 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
VGE = 10V
VGE = 15V
10
200
1
VGE = 10V
234 567
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
200
VGE = 10V OR 15V
5
123 4567
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
8
0.5
TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
0.4
VGE = 10V
0.3
0.2
VGE = 15V
0.1
0
12345678
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
100
1
234 567
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
8
0.8 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
0.7
0.6
VGE = 10V or 15V
0.5
0.4
0.3
0.2
0.1
0
1 2 34 56 7
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT

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