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부품번호 | STPS8H100G-1 기능 |
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기능 | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER | ||
제조업체 | ST Microelectronics | ||
로고 | |||
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® STPS8H100D/F/G/G-1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
8A
100 V
175 °C
0.58 V
FEATURES AND BENEFITS
NEGLIGIBLESWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
DESCRIPTION
Schottky barrier rectifier designed for high fre-
quency compact Switched Mode Power Sup-
plies such as adaptators and on board DC/DC
converters.
ABSOLUTE RATINGS (limiting values)
A
K
TO-220AC
STPS8H100D
A
K
NC
I2PAK
STPS8H100G-1
A
K
ISOWATT220AC
STPS8H100F
K
A
NC
D2PAK
STPS8H100G
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
Eas
Iar
Tstg
Tj
dV/dt
Parameter
Value
Repetitive peak reverse voltage
100
RMS forward current
30
Average forward current
δ = 0.5
TO-220AC /
I2PAK / D2PAK
Tc= 165°C
8
ISOWATT220AC Tc = 150°C
Surge non repetitive forward
current
tp = 10 ms sinusoidal
250
Repetitive peak reverse current
tp = 2 µs F = 1kHz square
1
Non repetitive peak reverse current tp = 100 µs square
3
Non repetitive avalanche energy
Tj = 25°C
Ias = 2 A
L = 60 mH
24
Repetitive avalanche current
Va = 1.5 x VR typ
Current decaying linearly
to 0 in 1µs
Frequency limited by Tj max.
2
Storage temperature range
- 65 to + 175
Maximum operating junction temperature
175
Critical rate of rise of rise voltage
10000
Unit
V
A
A
A
A
A
mJ
A
°C
°C
V/µs
August 1999 - Ed: 4A
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STPS8H100D/F/G/G-1
Fig. 6: Junction capacitance versus reverse volt-
age applied (typical values).
C(nF)
1000
500
F=1MHz
Tj=25°C
200
100
1
VR(V)
10
100
Fig. 7: Forward voltage drop versus forward cur-
rent (maximum values).
IFM(A)
50.0
10.0
Tj=125°C
Tj=25°C
1.0
0.1
0
VFM(V)
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6
Fig. 8: Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm)(D2PAK).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10 S(Cu) (cm )
0
0 4 8 12 16 20 24 28 32 36 40
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PACKAGE MECHANICAL DATA
I2PAK
E
L2
A
c2
D
L1
L
e
b2
b1
b
A1
c
STPS8H100D/F/G/G-1
REF.
A
A1
b
b1
b2
c
c2
D
e
E
L
L1
L2
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
4.40 4.60 0.173 0.181
2.49 2.69 0.098 0.106
0.70 0.93 0.028 0.037
1.14 1.17 0.044 0.046
1.14 1.17 0.044 0.046
0.45 0.60 0.018 0.024
1.23 1.36 0.048 0.054
8.95 9.35 0.352 0.368
2.40 2.70 0.094 0.106
10.0 10.4 0.394 0.409
13.1 13.6 0.516 0.535
3.48 3.78 0.137 0.149
1.27 1.40 0.050 0.055
Ordering type
Marking
Package
STPS8H100D STPS8H100D TO-220AC
STPS8H100F STPS8H100F ISOWATT220AC
STPS8H100G-1 STPS8H100G
I2PAK
STPS8H100G STPS8H100G
D2PAK
STPS8H100G-TR STPS8H100G
D2PAK
Epoxy meets UL94,V0
Weight
1.86g
2.00g
1.49g
1.48g
1.48g
Base qty
50
50
50
50
500
Delivery mode
Tube
Tube
Tube
Tube
Tape & reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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STPS8H100G-1 | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |