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HGTP7N60A4 데이터시트 PDF




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부품번호 HGTP7N60A4 기능
기능 600V/ SMPS Series N-Channel IGBT
제조업체 Intersil Corporation
로고 Intersil Corporation 로고


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HGTP7N60A4 데이터시트, 핀배열, 회로
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4,
TM HGTP7N60A4
Data Sheet
June 2000 File Number 4826.2
600V, SMPS Series N-Channel IGBT
The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and
HGTP7N60A4 are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD7N60A4S
TO-252AA
7N60A4
HGT1S7N60A4S
TO-263AB
7N60A4
HGTG7N60A4
TO-247
7N60A4
HGTP7N60A4
TO-220AB
7N60A4
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel,
e.g., HGTD7N60A4S9A.
Packaging
JEDEC STYLE TO-247
E
C
G
Features
• >100kHz Operation at 390V, 7A
• 200kHz Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . .75ns at TJ = 125oC
• Low Conduction Loss
Temperature Compensating SABER™ Model
www.intersil.com
Symbol
C
G
E
JEDEC TO-220AB
EC
G
COLLECTOR
(FLANGE)
JEDEC TO-252AA
COLLECTOR
(FLANGE)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
2-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc. | 1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000




HGTP7N60A4 pdf, 반도체, 판매, 대치품
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
30
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
25
20
TJ = 125oC
30
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
25
20
15 15
10
5
0
0
TJ = 150oC
TJ = 25oC
0.5 1.0 1.5 2.0 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3.0
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
10
5
0
0
TJ = 125oC
TJ = 150oC
TJ = 25oC
0.5 1.0 1.5 2.0 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3.0
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
500
RG = 25, L = 1mH, VCE = 390V
400
TJ = 125oC, VGE = 12V, VGE = 15V
300
200
100
0
0
TJ = 25oC, VGE = 12V, VGE = 15V
2 4 6 8 10 12
ICE, COLLECTOR TO EMITTER CURRENT (A)
14
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
350
RG = 25, L = 1mH, VCE = 390V
300
250
200
TJ = 125oC, VGE = 12V OR 15V
150
100
50
TJ = 25oC, VGE = 12V OR 15V
0
0 2 4 6 8 10 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
16
RG = 25, L = 1mH, VCE = 390V
TJ = 25oC, VGE = 12V
14 TJ = 125oC, VGE = 12V
12 TJ = 25oC, VGE = 15V
10
TJ = 125oC, VGE = 15V
8
0 2 4 6 8 10 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
2-4
40
RG = 25, L = 1mH, VCE = 390V
30 TJ = 25oC, VGE = 12V, VGE = 15V
20
10
TJ = 125oC, VGE = 12V, VGE = 15V
0
0 2 4 6 8 10 12 14
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT

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HGTP7N60A4 전자부품, 판매, 대치품
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
2-7 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.

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Intersil Corporation

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