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PDF AP4506GEM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP4506GEM-HF | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4506GEM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
▼ RoHS Compliant
D2
D2
D1
D1
SO-8
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and cost-
effectiveness.
G2
S2
S1 G1
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1 G2
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S1
30V
30mΩ
6.4A
-30V
40mΩ
-6A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
30 -30
+20 +20
6.4 -6.0
5.1 -4.8
30 -30
2.0
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
Units
V
V
A
A
A
W
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200902103
Free Datasheet http://www.Datasheet-PDF.com/
1 page  
N-Channel
12
I D =6A
V DS =24V
8
4
AP4506GEM-HF
f=1.0MHz
1000
C iss
C100
oss
C rss
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1 1s
T A =25 o C
Single Pulse
DC
0.01
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
Single Pulse
0.01
0.1
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
1 10 100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
Free Datasheet http://www.Datasheet-PDF.com/
5 Page | ||
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