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부품번호 | N3PF06 기능 |
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기능 | STN3PF06 | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 12 페이지수
STN3PF06
P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223
STripFET™ II Power MOSFET
Features
Type
STN3PF06
VDSS
60 V
RDS(on)
max
< 0.22 Ω
ID
2.5 A
■ Extremely dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
Application
■ Switching applications
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
2
3
2
1
SOT-223
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STN3PF06
Marking
N3PF06
Package
SOT-223
Packaging
Tape and reel
March 2008
Rev 4
1/12
www.st.com
12
Free Datasheet http://www.Datasheet-PDF.com/
Electrical characteristics
2 Electrical characteristics
STN3PF06
Note:
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
ID(on) On state drain current
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS = 0
60
V
VDS = Max rating
VDS = Max rating, TC=125 °C
VDS > ID(on) x RDS(on)max,
VGS =10 V
2.5
1 µA
10 µA
A
VGS = ±20 V
±100 nA
VDS = VGS, ID = 250 µA
2
4V
VGS = 10 V, ID = 1.5 A
0.20 0.22 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
VDS > ID(on) x RDS(on)max,
ID= 1.25 A
VDS = 25 V, f = 1 MHz,
VGS = 0
ID = 12 A, VDD = 48 V,
VGS = 10 V
(see Figure 14)
1.5 S
850 pF
230 pF
75 pF
16 21 nC
4 nC
6 nC
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
4/12
Free Datasheet http://www.Datasheet-PDF.com/
4페이지 STN3PF06
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
Figure 12. Source-drain diode forward
characteristics
7/12
Free Datasheet http://www.Datasheet-PDF.com/
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부품번호 | 상세설명 및 기능 | 제조사 |
N3PF06 | STN3PF06 | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |