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PDF FGA20S140P Data sheet ( Hoja de datos )

Número de pieza FGA20S140P
Descripción Shorted Anode IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FGA20S140P
Shorted AnodeTM IGBT
Features
• High speed switching
• Low saturation voltage: VCE(sat) =1.9V @ IC = 20A
• High input impedance
• RoHS compliant
Applications
• Induction Heating and Microwave Oven
• Soft Switching Applications
October 2012
General Description
Using advanced Field Stop Trench and Shorted Anode technol-
ogy, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior
conduction and switching performances, and easy parallel oper-
ation with exceptional avalanche capability. This device is
designed for induction heating and microwave oven.
C
GCE
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM (1)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Limited by Tjmax
G
E
Ratings
1400
±25
40
20
60
40
20
272
136
-55 to +175
-55 to +175
300
Typ.
--
--
Max.
0.55
40
Units
V
V
A
A
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2012 Fairchild Semiconductor Corporation
FGA20S140P Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/

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FGA20S140P pdf
Typical Performance Characteristics
Figure 13. Turn-on Characteristics VS.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
tr
100
10
10
td(on)
20 30
Collector Current, IC [A]
40
Figure 14.Turn-off Characteristics VS.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
td(off)
100
10
tf
20 30
Collector Current, IC [A]
40
Figure 15. Switching Loss VS. Gate Resistance
10
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 175oC
Eon
1
Figure 16. Switching Loss VS. Collector Current
30
10k
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
Eoff
1k
Eoff Eon
00..11
10
20 30 40 50 60
Gate Resistance, RG []
70
Figure 17. Turn off Switching SOA Characteristics
100
100
10
20 30
Collector Current, IC [A]
Figure 18. Forward Characteristics
80
40
TJ = 25oC
10
10
Safe Operating Area
VGE = 15V, TC = 175oC
1
1 10 100 1000 2000
Collector-Emitter Voltage, VCE [V]
1
0.5
0
TJ = 175oC
TC = 25oC
TC = 175oC
1
Forward Voltage, VF [V]
2
FGA20S140P Rev. C1
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/

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