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부품번호 | RQJ0303PGDQA 기능 |
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기능 | P-Channel MOSFET ( Transistor ) | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
RQJ0303PGDQA
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 54 mΩ typ (VGS = –10 V, ID = –1.6 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “PG”.
Preliminary Datasheet
R07DS0295EJ0600
Rev.6.00
Jan 10, 2014
3
D
G 1. Source
2 2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(Pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Ratings
–30
+10 / –20
–3.3
–5
–3.3
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0295EJ0600 Rev.6.00
Jan 10, 2014
Page 1 of 7
Free Datasheet http://www.datasheet-pdf.com/
RQJ0303PGDQA
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.3
Pulse Test
Tc = 25°C
–0.2
–1.0 A
–0.1 –0.5 A
–0.2 A
0
0 –4 –8 –12 –16 –20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Case Temperature
120
Pulse Test
110 VGS = –4.5 V
100 ID = –1 A
90 –0.5 A
80 –0.2 A
70
60
50
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
Pulse Test
VDS = –10 V
–25°C
1
Tc = 75°C
25°C
0.1
–0.1
–0.3
Drain Current ID (A)
–1
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
Tc = 25°C
0.3
0.1
0.03
VDS = -4.5 V
–10 V
0.01
–0.1
–0.3 –1 –3
Drain Current ID (A)
–10
Static Drain to Source on State Resistance
vs. Case Temperature
90
Pulse Test
80 VGS = –10 V
70 ID = –1 A
–0.5 A
60 –0.2 A
50
40
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
–10000
–1000
Pulse Test
VGS = 0 V
VDS = –30 V
–100
–10
–1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0295EJ0600 Rev.6.00
Jan 10, 2014
Page 4 of 7
Free Datasheet http://www.datasheet-pdf.com/
4페이지 RQJ0303PGDQA
Ordering Information
Orderable Part Number
Quantity
RQJ0303PGDQATL-H 3000 pcs.
Preliminary
Shipping Container
φ178 mm reel, 8 mm Emboss taping
R07DS0295EJ0600 Rev.6.00
Jan 10, 2014
Page 7 of 7
Free Datasheet http://www.datasheet-pdf.com/
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ RQJ0303PGDQA.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
RQJ0303PGDQA | P-Channel MOSFET ( Transistor ) | Renesas |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |