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PDF APT65GP60L2DQ2G Data sheet ( Hoja de datos )
| Número de pieza | APT65GP60L2DQ2G | |
| Descripción | IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
®
A6P0T06V5GP60L2DQ2
APT65GP60L2DQ2
APT65GP60L2DQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 100 kHz operation @ 400V, 54A
• 50 kHz operation @ 400V, 76A
• SSOA Rated
TO-264
Max
GC E
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT65GP60L2DQ2
UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
198
96
250
250A @ 600V
833
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000µA)
Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
600
3 4.5 6 Volts
2.2 2.7
2.1
1250
5500
µA
±100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Free Datasheet http://www.datasheet-pdf.com/
1 page  
TYPICAL PERFORMANCE CURVES
10,000
5000
Cies
1,000
500
C0es
100
50 Cres
10 0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT65GP60L2DQ2
300
250
200
150
100
50
0 0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
10-5
0.9
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
Junction
temp (°C)
Power
(watts)
Case temperature(°C)
RC MODEL
0.0683
0.0822
0.0217
0.256
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
187
100
50 Fmax = min (fmax, fmax2)
fmax1
=
td(on)
+
0.05
tr + td(off)
+
tf
TTDJC===50172%55°°CC
10 VRCGE==5Ω400V
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
10 30 50 70 90 110 130
Figure 20, OICp,eCraOtLinLgECFTreOqRueCnUcRyRvEsNCTo(Alle) ctor Current
Free Datasheet http://www.datasheet-pdf.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT65GP60L2DQ2G.PDF ] | |
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