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PDF A1048 Data sheet ( Hoja de datos )
| Número de pieza | A1048 | |
| Descripción | PNP Transistor - 2SA1048 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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1. A1048 2SA1048 transistor  Hay una vista previa y un enlace de descarga de A1048 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1048
2SA1048
Audio Frequency Amplifier Applications
Unit: mm
• Small package
• High voltage: VCEO = −50 V (min)
• High hFE: hFE = 70~400
• Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SC2458
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −50 V
Collector-emitter voltage
VCEO −50 V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−150
mA
Base current
IB
−50 mA
JEDEC
―
Collector power dissipation
PC
200 mW
JEITA
―
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
−55~125
°C
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods” ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
ICBO
VCB = −50 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat)
fT
Cob
NF
IC = −100 mA, IB = −10 mA
VCE = −10 V, IC = −1 mA
VCB = −10 V, IE = 0, f = 1 MHz
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
RG = 10 kΩ
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
70 ⎯ 400
⎯ −0.1 −0.3 V
80 ⎯ ⎯ MHz
⎯4
7 pF
⎯ 1.0 10 dB
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet A1048.PDF ] | |
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