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PDF VRF157FL Data sheet ( Hoja de datos )
| Número de pieza | VRF157FL | |
| Descripción | RF POWER VERTICAL MOSFET | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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RF POWER VERTICAL MOSFET
The VRF157FL is a gold-metallized silicon n-channel RF power transis-
tor designed for broadband commercial and military applications requiring
high power and gain without compromising reliability, ruggedness, or inter-
modulation distortion.
VRF157FL
VRF157FLMP
50V, 600W, 80MHz
D
SS
G
FEATURES
• Improved Ruggedness V(BR)DSS = 170V
• 600W with 21dB Typical Gain @ 30MHz, 50V
• Excellent Stability & Low IMD
• Common Source Configuration
• Available in Matched Pairs
• Nitride Passivated
• Economical Flangeless Package
• Refractory Gold Metallization
• High Voltage Replacement for MRF157
• RoHS Compliant
Maximum Ratings
Symbol
VDSS
ID
VGS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device dissipation @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise specified
VRF157FL(MP)
Unit
170 V
60 A
±40 V
1350
W
-65 to 150
200
°C
Static Electrical Characteristics
Symbol
V(BR)DSS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 40A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 20A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min Typ Max Unit
170 180
3.0 5.0
V
4.0 mA
4.0 μA
16 mhos
2.9 3.6 4.4
V
Thermal Characteristics
Symbol Characteristic
RθJC
RθJHS
Junction to Case Thermal Resistance
Junction to Sink Thermal Resistance (Use High Efficiency Thermal Joint Compound and Planar Heat Sink
Surface.)
Min Typ Max
0.13
0.22
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit
°C/W
Microsemi Website - http://www.microsemi.com
Free Datasheet http://www.datasheet-pdf.com/
1 page  
VRF157FL(MP)
Adding MP at the end of P/N specifies a matched pair where VGS(TH) is matched between the two parts. VTH values
are marked on the devices per the following table.
Code
A
B
C
D
E
F
G
H
J
K
Vth Range
2.900 - 2.975
2.975 - 3.050
3.050 - 3.125
3.125 - 3.200
3.200 - 3.275
3.275 - 3.350
3.350 - 3.425
3.425 - 3.500
3.500 - 3.575
3.575 - 3.650
Code 2
M
N
P
R
S
T
W
X
Y
Z
Vth Range
3.650 - 3.725
3.725 - 3.800
3.800 - 3.875
3.875 - 3.950
3.950 - 4.025
4.025 - 4.100
4.100 - 4.175
4.175 - 4.250
4.250 - 4.325
4.325 - 4.400
VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%.
Thermal Considerations and Package
Mounting:
The rated 1350W power dissipation is only available
when the package mounting surface is at 25°C and
the junction temperature is 200°C. The thermal resis-
tance between junctions and case mounting surface
is 0.13°C/W. When installed, an additional thermal
impedance of 0.09°C/W between the package base
and the mounting surface is smooth and flat. Thermal
joint compound must be used to reduce the effects of
small surface irregularities. The heatsink should incor-
porate a copper heat spreader to obtain best results.
The lid maintains the required mounting pressure while
allowing for thermal expansion of both the device and
the heat sink. Four 6-32 (M3.5) screws provide the
minimum 125 lb. required mounting force. T=4-6 in-lb.
Please refer to App Note 1802 "Mounting Instructions
for Flangeless Packages."
.250
.250
.125d
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and
mounting flange is beryllium oxide. Beryllium oxide dust
is highly toxic when inhaled. Care must be taken during
handling and mounting to avoid damage to this area.
These devices must never be thrown away with general
industrial or domestic waste.
.466
.150r .500
.750 1.000
1.250
1.500
.500
.300
.200
.005 .040
D
G
S
1
23
4
PIN 1 - DRAIN
PIN 2 - SOURCE
PIN 3 - SOURCE
PIN 4 - GATE
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
Free Datasheet http://www.datasheet-pdf.com/
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