Datasheet.kr   

ATF-54143 데이터시트 PDF




Agilent에서 제조한 전자 부품 ATF-54143은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 ATF-54143 자료 제공

부품번호 ATF-54143 기능
기능 Low Noise Enhancement Mode Pseudomorphic HEMT
제조업체 Agilent
로고 Agilent 로고


ATF-54143 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 17 페이지수

미리보기를 사용할 수 없습니다

ATF-54143 데이터시트, 핀배열, 회로
Agilent ATF-54143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Description
Agilent Technologies’s ATF-54143
is a high dynamic range, low
noise, E-PHEMT housed in a
4-lead SC-70 (SOT-343) surface
mount plastic package.
Surface Mount Package
SOT-343
The combination of high gain, high
linearity and low noise makes the
ATF-54143 ideal for cellular/PCS
base stations, MMDS, and other
systems in the 450 MHz to 6 GHz
frequency range.
Pin Connections and
Package Marking
DRAIN
SOURCE
Features
• High linearity performance
• Enhancement Mode Technology[1]
• Low noise figure
• Excellent uniformity in product
specifications
• 800 micron gate width
• Low cost surface mount small
plastic package SOT-343 (4 lead SC-
70)
• Tape-and-Reel packaging option
available
• Lead-free option available.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
SOURCE
GATE
Note:
Top View. Package marking provides orientation
and identification
“4F” = Device Code
“x” = Date code character
identifies month of manufacture.
Specifications
2 GHz; 3V, 60 mA (Typ.)
• 36.2 dBm output 3rd order intercept
• 20.4 dBm output power at 1 dB
gain compression
• 0.5 dB noise figure
• 16.6 dB associated gain
Applications
• Low noise amplifier for cellular/PCS
base stations
• LNA for WLAN, WLL/RLL and
MMDS applications
• General purpose discrete E-PHEMT
for other ultra low noise applications
Note:
1. Enhancement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
Free Datasheet http://www.datasheet-pdf.com/




ATF-54143 pdf, 반도체, 판매, 대치품
ATF-54143 Typical Performance Curves
0.7 0.6
0.6
0.5
0.4
0.3 3V
4V
0.2
0 20 40 60 80 100
Ids (mA)
Figure 6. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
0.5
0.4
0.3
0.2
0.1
3V
4V
0
0 20 40 60 80 100
Ids (mA)
Figure 7. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Min NF at 900 MHz.
25
24
23
22
21
20
19
3V
4V
18
0 20 40 60 80 100
Ids (mA)
Figure 9. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
42
37
32
27
22
17
3V
4V
12
0 20 40 60 80 100
Ids (mA)
Figure 10. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
24
22
20
18
16
14
3V
4V
12
0 20 40 60 80 100
Idq (mA)[1]
Figure 12. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
23
22
21
20
19
18
3V
17 4V
16
15
0 20 40 60 80 100
Idq (mA)[1]
Figure 13. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
19
18
17
16
15
14
13
3V
4V
12
0 20 40 60 80 100
Ids (mA)
Figure 8. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
40
35
30
25
20 3V
4V
15
0 20 40 60 80 100
Ids (mA)
Figure 11. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
35
30
25°C
-40°C
85°C
25
20
15
10
5
012 3 456
FREQUENCY (GHz)
Figure 14. Gain vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Notes:
1. Idq represents the quiescent drain current
without RF drive applied. Under low values of
Ids, the application of RF drive will cause Id to
increase substantially as P1dB is approached.
2. Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz
have been extrapolated. The Fmin values are
4
based on a set of 16 noise figure measure-
ments made at 16 different impedances using
an ATN NP5 test system. From these
measurements a true Fmin is calculated.
Refer to the noise parameter application
section for more information.
Free Datasheet http://www.datasheet-pdf.com/

4페이지










ATF-54143 전자부품, 판매, 대치품
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 60 mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12
Mag. Ang.
0.1 0.99 -18.9
0.5 0.81 -80.8
0.9 0.71 -117.9
1.0 0.69 -124.4
1.5 0.64 -149.8
1.9 0.62 -164.9
2.0 0.62 -168.3
2.5 0.60 176.2
3.0 0.60 162.3
4.0 0.62 137.1
5.0 0.66 115.5
6.0 0.69 97.2
7.0 0.70 80.2
8.0 0.72 62.2
9.0 0.76 45.0
10.0 0.83 28.4
11.0 0.85 13.9
12.0 0.88 -0.2
13.0 0.89 -14.6
14.0 0.88 -30.6
15.0 0.88 -45.0
16.0 0.88 -54.5
17.0 0.88 -62.5
18.0 0.92 -73.4
28.84
26.04
22.93
22.24
19.40
17.66
17.28
15.58
14.15
11.81
9.87
8.22
6.85
5.58
4.40
3.06
1.60
0.43
-0.65
-1.98
-3.62
-5.37
-6.83
-8.01
27.66
20.05
14.01
12.94
9.34
7.64
7.31
6.01
5.10
3.90
3.11
2.58
2.20
1.90
1.66
1.42
1.20
1.05
0.93
0.80
0.66
0.54
0.46
0.40
167.6
128.0
106.2
102.2
86.1
75.6
73.3
61.8
51.0
30.8
11.7
-6.4
-24.0
-41.8
-59.9
-78.7
-95.8
-111.1
-128.0
-146.1
-162.7
-176.6
171.9
157.9
0.01 80.0
0.03 52.4
0.04 41.8
0.05 40.4
0.05 36.1
0.06 33.8
0.06 33.3
0.07 30.1
0.08 26.5
0.09 17.1
0.11 6.8
0.12 -3.9
0.13 -15.8
0.14 -28.0
0.15 -39.6
0.15 -55.1
0.15 -68.6
0.15 -80.9
0.15 -94.9
0.14 -109.3
0.13 -122.9
0.12 -133.7
0.12 -143.2
0.11 -156.3
S22
Mag. Ang.
0.54 -14.0
0.40 -58.8
0.29 -83.8
0.27 -88.5
0.21 -105.2
0.17 -114.7
0.17 -117.0
0.13 -129.7
0.11 -146.5
0.10 165.2
0.14 131.5
0.18 112.4
0.20 94.3
0.23 70.1
0.29 50.6
0.38 36.8
0.46 24.4
0.51 11.3
0.55 -5.2
0.61 -20.8
0.66 -35.0
0.70 -45.8
0.73 -56.1
0.76 -68.4
MSG/MAG
dB
34.42
28.25
25.44
24.13
22.71
21.05
20.86
19.34
18. 04
1 4.87
13.27
11.72
10.22
9.02
8.38
8.71
7.55
7.55
6.70
5.01
3.73
2.54
1.57
2.22
Typical Noise Parameters, VDS = 3V, IDS = 60 mA
Freq Fmin
GHz dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.5 0.15 0.34 42.3 0.04
0.9 0.20 0.32 62.8 0.04
1.0 0.22 0.32 67.6 0.04
1.9
0.42
0.27
116.3
0.04
2.0
0.45
0.27
120.1
0.04
2.4
0.52
0.26
145.8
0.04
3.0
0.59
0.29
178.0
0.05
3.9
0.70
0.36
-145.4
0.05
5.0
0.93
0.47
-116.0
0.10
5.8 1.16 0.52 -98.9 0.18
6.0 1.19 0.55 -96.5 0.20
7.0 1.26 0.60 -77.1 0.37
8.0 1.63 0.62 -56.1 0.62
9.0 1.69 0.70 -38.5 0.95
10.0 1.73 0.79 -21.5 1.45
Ga
dB
28.50
24.18
23.47
18.67
18.29
16.65
15.56
13.53
12.13
11.10
10.95
9.73
8.56
7.97
7.76
40
35
30
25 MSG
20
15 MAG
10
5
S21
0
-5
10
-15
0
5 10 15
FREQUENCY (GHz)
Figure 20. MSG/MAG and |S21|2 vs.
Frequency at 3V, 60 mA.
20
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
7
Free Datasheet http://www.datasheet-pdf.com/

7페이지


구       성 총 17 페이지수
다운로드[ ATF-54143.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
ATF-54143

Low Noise Enhancement Mode Pseudomorphic HEMT

Agilent
Agilent

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵