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PDF BLS6G2735L-30 Data sheet ( Hoja de datos )
| Número de pieza | BLS6G2735L-30 | |
| Descripción | S-band LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLS6G2735L-30;
BLS6G2735LS-30
S-band LDMOS transistor
Rev. 3 — 24 September 2012
Product data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 3.5 GHz.
Table 1. Application information
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 50 mA.
Test signal
f
VDS
PL
Gp
D
(GHz)
(V)
(W) (dB) (%)
tr
(ns)
tf
(ns)
Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz
pulsed RF
3.1 to 3.5 32 30 13 50 20 10
Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz
pulsed RF
2.7 to 3.3 32 35 14 50 20 10
Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz
pulsed RF
2.7 to 3.5 32 30 12 47 20 10
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.7 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 2.7 GHz to 3.5 GHz
Free Datasheet http://www.datasheetlist.com/
1 page  
NXP Semiconductors
BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
7.2 Measured in application circuit from 2.7 GHz to 3.5 GHz
35
Gp
(dB)
30
25
20
15
10
5
(5) (4) (3) (2) (1)
(5) (4) (3) (2) (1)
aaa-001302 70
ηD
(%)
60
ηD
50
40
Gp
30
20
10
50
PL
(W)
40
30
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
20
10
aaa-001303
00
0 10 20 30 40 50
PL (W)
0
01234
Pi (W)
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %
(1) f = 2700 MHz
(2) f = 2900 MHz
(3) f = 3100 MHz
(4) f = 3300 MHz
(5) f = 3500 MHz
Fig 2. Power gain and drain efficiency as function of
output power; typical values
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2900 MHz
(4) f = 3000 MHz
(5) f = 3100 MHz
(6) f = 3200 MHz
(7) f = 3300 MHz
(8) f = 3400 MHz
(9) f = 3500 MHz
Fig 3. Output power as a function of input power;
typical values
BLS6G2735L-30_6G2735LS-30
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 September 2012
© NXP B.V. 2012. All rights reserved.
5 of 17
Free Datasheet http://www.datasheetlist.com/
5 Page 
NXP Semiconductors
BLS6G2735L-30; BLS6G2735LS-30
S-band LDMOS transistor
8.4 Measured in RF production test circuit from 3.1 GHz to 3.5 GHz
*S
G%
*S
Ș'
DDD
Ș'
3/
:
DDD
3/ :
3L :
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 10. Power gain and drain efficiency as function of
output power; typical values
VDS = 32 V; IDq = 50 mA; tp = 300 s; = 10 %
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 11. Output power as a function of input power;
typical values
*S
G%
*S
Ș'
DDD
Ș'
3/
:
DDD
3/ :
3L :
VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 12. Power gain and drain efficiency as function of
output power; typical values
VDS = 32 V; IDq = 50 mA; tp = 100 s; = 20 %
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 13. Output power as a function of input power;
typical values
BLS6G2735L-30_6G2735LS-30
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 September 2012
© NXP B.V. 2012. All rights reserved.
11 of 17
Free Datasheet http://www.datasheetlist.com/
11 Page | ||
| Páginas | Total 17 Páginas | |
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