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G30N60A4D 데이터시트 PDF




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부품번호 G30N60A4D 기능
기능 SMPS Series N-Channel IGBT
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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G30N60A4D 데이터시트, 핀배열, 회로
Data Sheet
HGTG30N60A4D
September 2004
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49345.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60A4D
TO-247
30N60A4D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• >100kHz Operation At 390V, 30A
• 200kHz Operation At 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC
• Low Conduction Loss
Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2004 Fairchild Semiconductor Corporation
HGTG30N60A4D Rev. B1
Free Datasheet http://www.datasheetlist.com/




G30N60A4D pdf, 반도체, 판매, 대치품
HGTG30N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
50
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
40
30
20
10
0
0
TJ = 125oC
TJ = 150oC
TJ = 25oC
0.5 1.0 1.5 2.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.5
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
50
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
40
30
20
TJ = 125oC
10
TJ = 150oC
TJ = 25oC
0
0 0.5 1.0 1.5 2.0 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3500
3000
2500
RG = 3, L = 200µH, VCE = 390V
TJ = 125oC, VGE = 12V, VGE = 15V
2000
1500
1000
500
0
0
TJ = 25oC, VGE = 12V, VGE = 15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
34 RG = 3, L = 200µH, VCE = 390V
32 TJ = 25oC, TJ = 125oC, VGE = 12V
30
28
26
24
22 TJ = 25oC, TJ = 125oC, VGE = 15V
20
0
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
1400
RG = 3, L = 200µH, VCE = 390V
1200
1000
800
TJ = 125oC, VGE = 12V OR 15V
600
400
200
0
0
TJ = 25oC, VGE = 12V OR 15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
100
RG = 3, L = 200µH, VCE = 390V
80
TJ = 125oC, VGE = 15V, VGE = 12V
60
TJ = 25oC, VGE = 12V
40
20
0
0
TJ = 25oC, VGE = 15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2004 Fairchild Semiconductor Corporation
HGTG30N60A4D Rev. B1
Free Datasheet http://www.datasheetlist.com/

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G30N60A4D 전자부품, 판매, 대치품
HGTG30N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
100
0.50
0.20
0.10
10-1
0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
101
HGTP30N60A4D
DIODE TA49373
RG = 3
L = 200µH
DUT
+
-
VDD = 390V
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
ICE
EOFF
10%
EON2
90%
10%
td(OFF)I tfI
trI
td(ON)I
FIGURE 25. SWITCHING TEST WAVEFORMS
©2004 Fairchild Semiconductor Corporation
HGTG30N60A4D Rev. B1
Free Datasheet http://www.datasheetlist.com/

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부품번호상세설명 및 기능제조사
G30N60A4D

SMPS Series N-Channel IGBT

Fairchild Semiconductor
Fairchild Semiconductor

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