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NTGD3147F 데이터시트 PDF




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부품번호 NTGD3147F 기능
기능 Power MOSFET and Schottky Diode
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NTGD3147F 데이터시트, 핀배열, 회로
NTGD3147F
Power MOSFET and
Schottky Diode
20 V, 2.5 A, PChannel with Schottky
Barrier Diode, TSOP6
Features
Fast Switching
Low Gate Change
Low RDS(on)
Low VF Schottky Diode
Independently Connected Devices to Provide Design Flexibility
This is a PbFree Device
Applications
DCDC Converters
Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady State
t5 s
Steady State
t5 s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
IDM
TJ, TSTG
20
±12
2.2
1.6
2.5
1.0
1.3
7.5
25 to
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 0.8
TL 260
Unit
V
V
A
W
A
°C
A
°C
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM 20 V
VR 20 V
Average Rectified Forward Current
IF 1 A
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – SteadyState (Note 1) RqJA
125 °C/W
JunctiontoAmbient – t 5 s (Note 1)
RqJA
100 °C/W
JunctiontoAmbient SteadyState (Note 2)
RqJA
235 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 30 mm2 [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
May, 2008 Rev. 0
1
http://onsemi.com
PCHANNEL MOSFET
V(BR)DSS
RDS(on) Max
ID Max
20 V
145 mW @ 4.5 V
200 mW @ 2.5 V
2.2 A
1.6 A
VR Max
20 V
SCHOTTKY DIODE
VF Max
0.45 V
IF Max
1.0 A
DA
G
S
PChannel MOSFET
K
Schottky Diode
MARKING
DIAGRAM
1
TSOP6
CASE 318G
STYLE 15
TC MG
G
1
TC = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PIN CONNECTION
A1
S2
6K
5 N/C
G3
4D
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTGD3147F/D
Free Datasheet http://www.datasheetlist.com/




NTGD3147F pdf, 반도체, 판매, 대치품
NTGD3147F
TYPICAL PERFORMANCE CHARACTERISTICS
10
9
3.0 V
TJ = 25°C
2.8 V
8
7
VGS = 3.5 V to 4.5 V 2.6 V
2.5 V
6 2.4 V
5
2.2 V
4
3 2.0 V
2 1.8 V
1 VGS = 1.5 V
00 1 2 3 4
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
10
9 VDS = 5 V
8
7
6
5 TJ = 125°C
4
3 TJ = 25°C
2
1
0 TJ = 55°C
123
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
4
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
1.5
TJ = 25°C
ID = 2.2 A
2 2.5 3 3.5 4 4.5
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance versus
GatetoSource Voltage
5
0.30
0.25
VGS = 2.0 V
TJ = 25°C
0.20
0.15
VGS = 2.5 V
VGS = 3.0 V
0.10
VGS = 4.5 V
0.05
01 2345 67
ID, DRAIN CURRENT (A)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1.6
1.5
1.4
VGS = 4.5 V
ID = 2.2 A
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
50
25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
600
550
500
450 CISS
TJ = 25°C
VGS = 0 V
f = 1 MHz
400
350
300
250
200
150 COSS
100
50
0
CRSS
0 5 10 15 20
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. Capacitance Variation
http://onsemi.com
4
Free Datasheet http://www.datasheetlist.com/

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NTGD3147F 전자부품, 판매, 대치품
D
65 4
HE
12 3
E
b
e
0.05 (0.002)
A1
A
NTGD3147F
PACKAGE DIMENSIONS
TSOP6
CASE 318G02
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
q
c
L
MILLIMETERS
DIM MIN
NOM MAX
A 0.90
1.00
1.10
A1 0.01
0.06
0.10
b 0.25
0.38
0.50
c 0.10 0.18 0.26
D 2.90
3.00
3.10
E 1.30
1.50
1.70
e 0.85 0.95 1.05
L 0.20
0.40
0.60
H E 2.50
q 0°
2.75
3.00
10°
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 15:
PIN 1. ANODE
2. SOURCE
3. GATE
4. DRAIN
5. N/C
6. CATHODE
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81357733850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
7
NTGD3147F/D
Free Datasheet http://www.datasheetlist.com/

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부품번호상세설명 및 기능제조사
NTGD3147F

Power MOSFET and Schottky Diode

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