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부품번호 | NTGD3147F 기능 |
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기능 | Power MOSFET and Schottky Diode | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 7 페이지수
NTGD3147F
Power MOSFET and
Schottky Diode
−20 V, −2.5 A, P−Channel with Schottky
Barrier Diode, TSOP−6
Features
• Fast Switching
• Low Gate Change
• Low RDS(on)
• Low VF Schottky Diode
• Independently Connected Devices to Provide Design Flexibility
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady State
t≤ 5 s
Steady State
t≤ 5 s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
IDM
TJ, TSTG
−20
±12
−2.2
−1.6
−2.5
1.0
1.3
−7.5
−25 to
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS −0.8
TL 260
Unit
V
V
A
W
A
°C
A
°C
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM 20 V
VR 20 V
Average Rectified Forward Current
IF 1 A
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady−State (Note 1) RqJA
125 °C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
100 °C/W
Junction−to−Ambient Steady−State (Note 2)
RqJA
235 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 30 mm2 [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 0
1
http://onsemi.com
P−CHANNEL MOSFET
V(BR)DSS
RDS(on) Max
ID Max
−20 V
145 mW @ −4.5 V
200 mW @ −2.5 V
−2.2 A
−1.6 A
VR Max
20 V
SCHOTTKY DIODE
VF Max
0.45 V
IF Max
1.0 A
DA
G
S
P−Channel MOSFET
K
Schottky Diode
MARKING
DIAGRAM
1
TSOP−6
CASE 318G
STYLE 15
TC MG
G
1
TC = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
A1
S2
6K
5 N/C
G3
4D
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTGD3147F/D
Free Datasheet http://www.datasheetlist.com/
NTGD3147F
TYPICAL PERFORMANCE CHARACTERISTICS
10
9
−3.0 V
TJ = 25°C
−2.8 V
8
7
VGS = −3.5 V to −4.5 V −2.6 V
−2.5 V
6 −2.4 V
5
−2.2 V
4
3 −2.0 V
2 −1.8 V
1 VGS = −1.5 V
00 1 2 3 4
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
10
9 VDS = −5 V
8
7
6
5 TJ = 125°C
4
3 TJ = 25°C
2
1
0 TJ = −55°C
123
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
4
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
1.5
TJ = 25°C
ID = −2.2 A
2 2.5 3 3.5 4 4.5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
5
0.30
0.25
VGS = −2.0 V
TJ = 25°C
0.20
0.15
VGS = −2.5 V
VGS = −3.0 V
0.10
VGS = −4.5 V
0.05
01 2345 67
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
1.5
1.4
VGS = −4.5 V
ID = −2.2 A
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
600
550
500
450 CISS
TJ = 25°C
VGS = 0 V
f = 1 MHz
400
350
300
250
200
150 COSS
100
50
0
CRSS
0 5 10 15 20
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Capacitance Variation
http://onsemi.com
4
Free Datasheet http://www.datasheetlist.com/
4페이지 D
65 4
HE
12 3
E
b
e
0.05 (0.002)
A1
A
NTGD3147F
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
q
c
L
MILLIMETERS
DIM MIN
NOM MAX
A 0.90
1.00
1.10
A1 0.01
0.06
0.10
b 0.25
0.38
0.50
c 0.10 0.18 0.26
D 2.90
3.00
3.10
E 1.30
1.50
1.70
e 0.85 0.95 1.05
L 0.20
0.40
0.60
H E 2.50
q 0°
2.75
−
3.00
10°
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 15:
PIN 1. ANODE
2. SOURCE
3. GATE
4. DRAIN
5. N/C
6. CATHODE
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
7
NTGD3147F/D
Free Datasheet http://www.datasheetlist.com/
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