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PDF 12N50FT Data sheet ( Hoja de datos )
| Número de pieza | 12N50FT | |
| Descripción | FDPF12N50FT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDP12N50F / FDPF12N50FT
N-Channel MOSFET
500V, 11.5A, 0.7Ω
Features
• RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A
• Low gate charge ( Typ. 21nC)
• Low Crss ( Typ. 11pF)
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP12N50F FDPF12N50FT
500
±30
11.5 11.5*
6.9 6.9*
(Note 1)
46
46*
(Note 2)
456
(Note 1)
11.5
(Note 1)
16.5
(Note 3)
4.5
165 42
1.33 0.33
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP12N50F FDPF12N50FT
0.75
3.0
0.5 -
62.5 62.5
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP12N50F / FDPF12N50FT Rev. A1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF12N50FT
5
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-4
10-3
PDM
* Notes :
t1
t2
1. ZθJC(t) = 3oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
FDP12N50F / FDPF12N50FT Rev. A1
5
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 12N50FT.PDF ] | |
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