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PDF TSM20N50CN Data sheet ( Hoja de datos )
| Número de pieza | TSM20N50CN | |
| Descripción | 500V N-Channel Power MOSFET | |
| Fabricantes | Taiwan Semiconductor | |
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TO-3PN
Pin Definition:
1. Gate
2. Drain
3. Source
TSM20N50CN
500V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
500 0.3 @ VGS =10V
ID (A)
20
General Description
The TSM20N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Features
Block Diagram
● Low RDS(ON) 0.3Ω (Max.)
● Low gate charge typical @ 54nC (Typ.)
● Improve dv/dt capability
Ordering Information
Part No.
Package
TSM20N50CN C0
TO-3PN
Packing
30pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TC=25℃)
VDS 500
VGS ±30
ID 20
Pulsed Drain Current *
IDM 80
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
EAS
IAR
EAR
TJ
TSTG
1088
20
31.2
150
-55 to +150
Unit
V
V
A
A
V/ns
mJ
A
mJ
ºC
oC
1/8
Version: A12
Free Datasheet http://www.datasheetlist.com/
1 page  
Gate Charge Test Circuit & Waveform
TSM20N50CN
500V N-Channel Power MOSFET
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
5/8
Version: A12
Free Datasheet http://www.datasheetlist.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TSM20N50CN.PDF ] | |
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