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PDF TSM20N50 Data sheet ( Hoja de datos )
| Número de pieza | TSM20N50 | |
| Descripción | 500V N-Channel Power MOSFET | |
| Fabricantes | Taiwan Semiconductor | |
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TO-220
TSM20N50
500V N-Channel Power MOSFET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
500 0.3 @ VGS =10V
ID (A)
18
General Description
The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Features
Block Diagram
● Low RDS(ON) 0.3Ω (Max.)
● Low gate charge typical @ 54nC (Typ.)
● Improve dv/dt capability
Ordering Information
Part No.
TSM20N50CZ C0
TSM20N50CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TC=25℃)
Pulsed Drain Current *
VDS
VGS
ID
IDM
Peak Diode Recovery dv/dt (Note 3)
dv/dt
Single Pulse Avalanche Energy (Note 2)
EAS
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
IAR
EAR
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
TJ
TSTG
Limit
500
±30
18
72
4.5
954
18
29
150
-55 to +150
Unit
V
V
A
A
V/ns
mJ
A
mJ
ºC
oC
1/10
Version: A12
Free Datasheet http://www.datasheetlist.com/
1 page  
TSM20N50
500V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220)
5/10
Version: A12
Free Datasheet http://www.datasheetlist.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TSM20N50.PDF ] | |
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