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AT49F8192AT 데이터시트 PDF




ATMEL Corporation에서 제조한 전자 부품 AT49F8192AT은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 AT49F8192AT 기능
기능 (AT49F008A / AT49F8192A) 8-megabit (1M x 8 / 512K x 16) Flash Memory
제조업체 ATMEL Corporation
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AT49F8192AT 데이터시트, 핀배열, 회로
Features
Single-voltage Operation
– 5V Read
– 5V Programming
Fast Read Access Time – 70 ns
Internal Erase/Program Control
Sector Architecture
– One 8K Word (16K Bytes) Boot Block with Programming Lockout
– Two 4K Word (8K Bytes) Parameter Blocks
– One 496K Word (992K Bytes) Main Memory Array Block
Fast Sector Erase Time – 10 seconds
Byte-by-byte or Word-by-word Programming – 10 µs Typical
Hardware Data Protection
Data Polling for End of Program Detection
Low Power Dissipation
– 50 mA Active Current
– 100 µA CMOS Standby Current
Typical 10,000 Write Cycles
8-megabit
(1M x 8/
512K x 16)
Flash Memory
Description
The AT49F008A(T) and AT49F8192A(T) are 5-volt, 8-megabit Flash memories orga-
nized as 1,048,576 words of 8 bits each or 512K words of 16 bits each. Manufactured
with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times
to 90 ns with power dissipation of just 275 mW. When deselected, the CMOS standby
current is less than 100 µA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49F008A/8192A locates the boot block at lowest
order addresses (“bottom boot”); the AT49F008AT/8192AT locates it at highest order
addresses (“top boot”).
To allow for simple in-system reprogrammability, the AT49F008A(T)/8192A(T) does
not require high-input voltages for programming. Reading data out of the device is
similar to reading from an EPROM; it has standard CE, OE and WE inputs to avoid
bus contention. Reprogramming the AT49F008A(T)/8192A(T) is performed by first
erasing a block of data and then programming on a byte-by-byte or word-by-word
basis.
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
RESET
RDY/BUSY
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Ready/Busy Output
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
AT49F008A
AT49F008AT
AT49F8192A
AT49F8192AT
Rev. 1199G–FLASH–11/02
1
Free Datasheet http://www.datasheetlist.com/




AT49F8192AT pdf, 반도체, 판매, 대치품
RESET: A RESET input pin is provided to ease some system applications. When RESET is at
a logic high level, the device is in its standard operating mode. A low level on the RESET input
halts the present device operation and puts the outputs of the device in a high-impedance
state. When a high level is reasserted on the RESET pin, the device returns to the read or
standby mode, depending upon the state of the control inputs. By applying a 12V ± 0.5V input
signal to the RESET pin, the boot block array can be reprogrammed even if the boot block pro-
gram lockout feature has been enabled (see Boot Block Programming Lockout Override
section).
ERASURE: Before a byte or word can be reprogrammed, it must be erased. The erased state
of memory bits is a logic “1”. The entire device can be erased by using the Chip Erase com-
mand or individual sectors can be erased by using the Sector Erase command.
CHIP ERASE: The entire device can be erased at one time by using the 6-byte chip erase
software code. After the chip erase has been initiated, the device will internally time the erase
operation so that no external clocks are required. The maximum time to erase the chip is tEC.
If the boot block lockout has been enabled, the chip erase will not erase the data in the boot
block; it will erase the main memory block and the parameter blocks only. After the chip erase,
the device will return to the read or standby mode.
SECTOR ERASE: As an alternative to a full chip erase, the device is organized into four sec-
tors that can be individually erased. There are two 4K word parameter block sections, one
boot block, and the main memory array block. The Sector Erase command is a six-bus cycle
operation. The sector address is latched on the falling WE edge of the sixth cycle while the
30H data input command is latched at the rising edge of WE. The sector erase starts after the
rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will auto-
matically time to completion. Whenever the main memory block is erased and reprogrammed,
the two parameter blocks should be erased and reprogrammed before the main memory block
is erased again. Whenever a parameter block is erased and reprogrammed, the other param-
eter block should be erased and reprogrammed before the first parameter block is erased
again. Whenever the boot block is erased and reprogrammed, the main memory block and the
parameter blocks should be erased and reprogrammed before the boot block is erased again.
BYTE/WORD PROGRAMMING: Once a memory block is erased, it is programmed (to a logic
“0”) on a byte-by-byte or word-by-word basis. Programming is accomplished via the internal
device command register and is a four-bus cycle operation. The device will automatically gen-
erate the required internal program pulses.
Any commands written to the chip during the embedded programming cycle will be ignored. If
a hardware reset happens during programming, the data at the location being programmed
will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase
operations can convert “0”s to “1”s. Programming is completed after the specified tBP cycle
time. The Data Polling feature may also be used to indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device has one designated block that has
a programming lockout feature. This feature prevents programming of data in the designated
block once the feature has been enabled. The size of the block is 8K words. This block,
referred to as the boot block, can contain secure code that is used to bring up the system.
Enabling the lockout feature will allow the boot code to stay in the device while data in the rest
of the device is updated. This feature does not have to be activated; the boot block’s usage as
a write-protected region is optional to the user. The address range of the boot block is 00000H
to 03FFFH for the AT49F008A; FC000H to FFFFFH for the AT49F008AT; 00000H to 01FFFH
for the AT49F8192A; and 7E000H to 7FFFFH for the AT49F8192AT.
4 AT49F008A(T)/8192A(T)
1199G–FLASH–11/02
Free Datasheet http://www.datasheetlist.com/

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AT49F8192AT 전자부품, 판매, 대치품
AT49F008A(T)/8192A(T)
DC and AC Operating Range
Operating Temperature (Case)
VCC Power Supply
Com.
Ind.
AT49F008A/8192A(T)-70
N/A
-40°C - 85°C
5V ± 10%
AT49F008A/8192A(T)-90
N/A
-40°C - 85°C
5V ± 10%
Operating Modes
Mode
CE OE WE RESET
Ai I/O
Read
Program/Erase(2)
Standby/Program
Inhibit
VIL VIL VIH VIH
VIL VIH VIL VIH
VIH X(1) X
VIH
Ai DOUT
Ai DIN
X High-Z
Program Inhibit
Program Inhibit
Output Disable
Reset
Product Identification
X X VIH VIH
X VIL X VIH
X VIH X VIH
X X X VIL
High-Z
X High-Z
Hardware
A1 - A18 = VIL, A9 = VH(3)
Manufacturer Code(4)
A0 = VIL
VIL
VIL
VIH
VIH
A1 - A18 = VIL, A9 = VH(3)
A0 = VIH
Device Code(4)
Software(5)
A0 = VIL, A1 - A18 = VIL
Manufacturer Code(4)
VIH
A0 = VIH, A1 - A18 = VIL
Device Code(4)
Notes:
1. X can be VIL or VIH.
2. Refer to AC programming waveforms.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 001FH
Device Code: 22H (AT49F008A); 00A0H (AT49F8192A); 21H (AT49F008AT); 00A3H (AT49F8192AT).
5. See details under “Software Product Identification Entry/Exit” on page 13.
DC Characteristics
Symbol
Parameter
ILI
ILO
ISB1
ISB2
ICC(1)
VIL
VIH
VOL
VOH
Note:
Input Load Current
Output Leakage Current
VCC Standby Current CMOS
VCC Standby Current TTL
VCC Active Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1. In the erase mode, ICC is 90 mA.
Condition
VIN = 0V to VCC
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC
CE = 2.0V to VCC
f = 5 MHz; IOUT = 0 mA
IOL = 2.1 mA
IOH = -400 µA
Min Max
Units
10.0 µA
10.0 µA
100.0
µA
3.0 mA
50.0 mA
0.8 V
2.0 V
0.45 V
2.4 V
1199G–FLASH–11/02
7
Free Datasheet http://www.datasheetlist.com/

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관련 데이터시트

부품번호상세설명 및 기능제조사
AT49F8192A

(AT49F008A / AT49F8192A) 8-megabit (1M x 8 / 512K x 16) Flash Memory

ATMEL Corporation
ATMEL Corporation
AT49F8192AT

(AT49F008A / AT49F8192A) 8-megabit (1M x 8 / 512K x 16) Flash Memory

ATMEL Corporation
ATMEL Corporation

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