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PDF C2M1000170D Data sheet ( Hoja de datos )
| Número de pieza | C2M1000170D | |
| Descripción | Silicon Carbide Power MOSFET | |
| Fabricantes | Cree | |
| Logotipo |  |
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VDS
1700 V
C2M1000170D
Silicon Carbide Power MOSFET
Z-FETTM MOSFET
ID @ 25˚C 4.9 A
RDS(on)
1.0 Ω
N-Channel Enhancement Mode
Features
Package
• High Speed Switching with Low Capacitances
•
•
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
•
•
•
•
Higher System Efficiency
Increased System Switching Frequency
Reduced Cooling Requirements
Increased System Reliability
TO-247-3
Applications
•
•
Auxiliary Power Supplies
Switch Mode Power Supplies
Part Number
Package
C2M1000170D
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
IDS (DC) Continuous Drain Current
IDS (pulse) Pulsed Drain Current
VGS Gate Source Voltage
4.9 A VGS = 20 V, TC = 25 °C
3.0 VGS = 20 V, TC = 100 °C
5.0 A Pulse width tP limited by Tjmax
TC = 25 °C
-10/+25 V
Fig. 14
Fig. 16
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
69
-55 to
+150
260
1
8.8
W TC=25 °C, TJ = 150 °C
˚C
Fig. 13
˚C 1.6 mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1 C2M1000170D Rev. A
Free Datasheet http://www.nDatasheet.com
1 page  
Typical Performance
80
70
60
50
40
30
20
10
0
-55
Conditions:
TJ ≤ 150 °C
-5 45 95
Case Temperature, TC (°C)
145
Figure 13. Power Dissipation Derating Curve
D=90%
D=710%
D=30%
D=10%
0.1
D=5.0%
D=2.0%
D=1.0%
0.01
D=0.5%
D=0.2%
Single Pulse
0.001
11E-µ6s
1100E-µ6 s
110000Eµ-6s
tp D = tp / T
11Em-3s
Time
101E0-m3 s
T
100Em-3s
1 s1
Figure 15. Typical Transient Thermal Impedance
(Junction - Case) with Duty Cycle
60
trv
50
40 Conditions:
VGS = 0/20 V
VDD = 1000 V
30 RL = 160 Ω
ID = 2.0 A
TJ= 25°C
20
tD(off)V
10
0
0
tD(on)V
5 10 15 20
External Gate Resistor, RG (Ω)
25
Figure 17. Resistive Switching Times vs. RG
6
Conditions:
TJ ≤ 150 °C
5
4
3
2
1
0
-55
-5 45 95
Case Temperature, TC (°C)
145
Figure 14. Continuous IDS Current derating curve
10.00
1.00
Limited by RDS On
100 µs
1 ms
100 ms
1 µs
0.10
0.01
0.1
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
1 10 100
Drain-Source Voltage, VDS (V)
1000
Figure 16. Safe Operating Area, TJ = 25 °C
20
Conditions:
IDS = 1 A
IGS = 1 mA
15 VDS = 1000 V
TJ = 25 °C
10
5
0
-5
0 2 4 6 8 10 12 14
Gate Charge, QG (nC)
Figure 18. Typical Gate Charge
5 C2M1000170D Rev. A
Free Datasheet http://www.nDatasheet.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet C2M1000170D.PDF ] | |
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