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부품번호 | C3D10060G 기능 |
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기능 | Silicon Carbide Schottky Diode | ||
제조업체 | Cree | ||
로고 | |||
전체 6 페이지수
C3D10060G
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
• 600-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
• Automotive Qualified to AEC-Q101
Applications
• Switch Mode Power Supplies
• Power Factor Correction
•
- Typical PFC Pout : 1000W-2000W
Motor Drives
- Typical Power : 3HP-5HP
Package
VRRM = 600 V
IF (TC=135˚C) = 14 A
Qc = 25 nC
TO-263-2
PIN 1
PIN 2
CASE
Part Number
C3D10060G
Package
TO-263-2
Marking
C3D10060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VDC
IF
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM Non-Repetitive Peak Forward Surge Current
IFSM Non-Repetitive Peak Forward Surge Current
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
600
600
600
29.5
14
10
67
44
90
71
250
136
59
-55 to
+175
V
V
V
TC=25˚C
A TC=135˚C
TC=152˚C
A
TC=25˚C, tP=10 ms, Half Sine Wave, D=0.3
TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3
A
TC=25˚C, tP=10ms, Half Sine Wave, D=0.3
TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3
A TC=25˚C, tP=10 µs, Pulse
W
TC=25˚C
TC=110˚C
˚C
1 C3D10060G Rev. E
Free Datasheet http://www.nDatasheet.com
Typical Performance
1401.04000
1201.02000
1001.00000
80.08000
60.06000
40.04000
20.02000
0.0000
2255 5500 7755 110000 112255 115500 117755
TC Case Temperature (°C)
Figure 6. Power Derating
Diode Model
Diode Model CSD10060
V fVTfT==VTV+T+IfI*fR*TRT
VRRVTTTT====00..000952..209+48+(++T(T(j(j*TT*JJ-**10..30-2519.*5*.161200*2--331*))01-03)-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT RT
4 C3D10060G Rev. E
Free Datasheet http://www.nDatasheet.com
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ C3D10060G.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
C3D10060A | Silicon Carbide Schottky Diode | Cree |
C3D10060G | Silicon Carbide Schottky Diode | Cree |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |