|
|
|
부품번호 | C4D08120A 기능 |
|
|
기능 | Silicon Carbide Schottky Diode | ||
제조업체 | Cree | ||
로고 | |||
전체 6 페이지수
C4D08120A
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
VRRM = 1200 V
IF (TC=135˚C) = 11 A
Qc = 37 nC
Features
• 1.2kV Schottky Rectifier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Solar Inverters
• UPS
• Motor Drives
Package
TO-220-2
PIN 1
PIN 2
CASE
Part Number
C4D08120A
Package
TO-220-2
Marking
C4D08120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VR
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Peak Reverse Voltage
IF Continuous Forward Current
IFRM
IFSM
IF,Max
Ptot
TJ
Tstg
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation
Operating Junction Range
Storage Temperature Range
TO-220 Mounting Torque
1200
V
1300
V
1200
V
23
11
8
37.5
25
64
49.5
600
480
120
52
-55 to
+175
-55 to
+135
1
8.8
A
A
A
A
W
˚C
˚C
Nm
lbf-in
TC=25˚C
TC=135˚C
TC=153˚C
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
TC=25˚C
TC=110˚C
M3 Screw
6-32 Screw
1 C4D08120A Rev. A
Free Datasheet http://www.nDatasheet.com
Typical Performance
220.00
118.80
116.60
114.40
112.20
110.00
8.80
6.60
4.40
2.20
0.00
00 220000 440000 660000 880000 11000000
VR ReVveRrse(VVolt)age (V)
Figure 7. Typical Capacitance Stored Energy
11000000
110000
TJ = 25°C
TJ = 110°C
100
11.EE-0-505 1E1.-E0-044 1E1.-E0-033 1E1-.0E-202
tp (stp)(s)
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
1
0.5
0.3
100E-3
0.1
0.05
0.02
10E-3 0.01
SinglePulse
1E-3
1E-6
10E-6
100E-6
1E-3
TimTe(,Stpe(cs))
10E-3
Figure 9. Transient Thermal Impedance
100E-3
1
4 C4D08120A Rev. A
Free Datasheet http://www.nDatasheet.com
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ C4D08120A.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
C4D08120A | Silicon Carbide Schottky Diode | Cree |
C4D08120E | Silicon Carbide Schottky Diode | Cree |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |