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IGCM15F60GA 데이터시트 PDF




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부품번호 IGCM15F60GA 기능
기능 Control Integrated POwer System
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IGCM15F60GA 데이터시트, 핀배열, 회로
Data Sheet, Oct. 2011
Control Integrated POwer
System (CIPOS™)
IGCM15F60GA
http://www.lspst.com
For Power Management
Application
Free Datasheet http://www.nDatasheet.com




IGCM15F60GA pdf, 반도체, 판매, 대치품
CIPOS™ IGCM15F60GA
CIPOS™
Control Integrated POwer System
Dual In-Line Intelligent Power Module
-bridge 600V / 15A
Features
Fully isolated Dual In-Line molded module
Infineon reverse conducting IGBTs with
monolithic body diode
Rugged SOI gate driver technology with
stability against transient and negative voltage
Allowable negative VS potential up to -11V for
signal transmission at VBS=15V
Integrated bootstrap functionality
Over current shutdown
Temperature monitor
Under-voltage lockout at all channels
Low side emitter pins accessible for all phase
current monitoring (open emitter)
Cross-conduction prevention
All of 6 switches turn off during protection
Lead-free terminal plating; RoHS compliant
Target Applications
Dish washers
Refrigerators
Washing machines
Air-conditioners
Fans
Low power motor drives
Description
The CIPOS™ module family offers the chance for
integrating various power and control components
to increase reliability, optimize PCB size and
system costs.
It is designed to control three phase AC motors
and permanent magnet motors in variable speed
drives for applications like air conditioning,
refrigerator and washing machine. The package
concept is specially adapted to power applications,
which need good thermal conduction and
electrical isolation, but also EMI-save control and
overload protection. The features of Infineon
reverse conducting IGBT are combined with an
optimized SOI gate driver for excellent electrical
performance.
System Configuration
3 half bridges with reverse conducting IGBT
3Φ SOI gate driver
Thermistor
Pin-to-heasink creepage distance typ. 1.6mm
Data Sheet
4/15
Oct. 2011
Free Datasheet http://www.nDatasheet.com

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IGCM15F60GA 전자부품, 판매, 대치품
CIPOS™ IGCM15F60GA
It is recommended for proper work of CIPOS™
not to provide input pulse-width lower than 1us.
The integrated gate drive provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of two gate drivers of
the same leg (i.e. HO1 and LO1, HO2 and LO2,
HO3 and LO3). When two inputs of a same leg
are activated, only former activated one is
activated so that the leg is kept steadily in a safe
state.
A minimum deadtime insertion of typ 380ns is also
provided by driver IC, in order to reduce cross-
conduction of the external power switches.
VFO (Fault-output and NTC, Pin 14)
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered
over current detection at ITRIP. A pull-up resistor
is externally required to bias the NTC.
VFO
VSS
VDD
RON,FLT from ITRIP -Latch
>1
from uv -detection
Thermistor
CIPOS™
Figure 5: Internal circuit at pin VFO
The same pin provides direct access to the NTC,
which is referenced to VSS. An external pull-up
resistor connected to +5V ensures, that the
resulting voltage can be directly connected to the
microcontroller.
ITRIP (Over current detection function, Pin 15)
CIPOS™ provides an over current detection
function by connecting the ITRIP input with the
motor current feedback. The ITRIP comparator
threshold (typ 0.47V) is referenced to VSS ground.
A input noise filter (typ: tITRIPMIN = 530ns) prevents
the driver to detect false over-current events.
Over current detection generates a shut down of
all outputs of the gate driver after the shutdown
propagation delay of typically 1000ns.
The fault-clear time is set to typical 65us.
VDD, VSS (Low side control supply and
reference, Pin 13, 16)
VDD is the low side supply and it provides power
both to input logic and to low side output power
stage. Input logic is referenced to VSS ground.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1V is present.
The IC shuts down all the gate drivers power
outputs, when the VDD supply voltage is below
Data Sheet
7/15
VDDUV- = 10.4V. This prevents the external power
switches from critically low gate voltage levels
during on-state and therefore from excessive
power dissipation.
VB(U,V,W) and VS(U,V,W) (High side supplies,
Pin 1 - 6)
VB to VS is the high side supply voltage. The high
side circuit can float with respect to VSS following
the external high side power device emitter
voltage.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 12.1V and a
falling threshold of VBSUV- = 10.4V.
VS(U,V,W) provide a high robustness against
negative voltage in respect of VSS of -50V
transiently. This ensures very stable designs even
under rough conditions.
NW, NV, NU (Low side emitter, Pin 17 - 19)
The low side emitters are available for current
measurements of each phase leg. It is
recommended to keep the connection to pin VSS
as short as possible in order to avoid unnecessary
inductive voltage drops.
W, V, U (High side emitter and low side
collector, Pin 20 - 22)
These pins are motor U, V, W input pins
P (Positive bus input voltage, Pin 23)
The high side IGBT are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 450 V.
Oct. 2011
Free Datasheet http://www.nDatasheet.com

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부품번호상세설명 및 기능제조사
IGCM15F60GA

Control Integrated POwer System

LS Power Semitech
LS Power Semitech
IGCM15F60GA

Control Integrated POwer System

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Infineon

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