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부품번호 | KF9N25F 기능 |
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기능 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
제조업체 | KEC | ||
로고 | |||
전체 7 페이지수
SEMICONDUCTOR
TECHNICAL DATA
KF9N25P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
KF9N25P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converters
and switching mode power supplies.
FEATURES
VDSS= 250V, ID= 9.0A
Drain-Source ON Resistance : RDS(ON)=0.4
Qg(typ) = 14.5nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
KF9N25P
KF9N25F
UNIT
Drain-Source Voltage
VDSS
250
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
9.0 9.0*
5.65 5.65*
25 25*
180
4.0
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
83
0.67
38
0.3
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
3.3
62.5
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
(KF9N25P, KF9N25F)
D
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF9N25F
AC
E
LM
D
NN
R
H
123
1. GATE
2. DRAIN
3. SOURCE
* Single Gauge Lead Frame
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
G
2010. 12. 3
S
Revision No : 0
1/7
Free Datasheet http://www.nDatasheet.com
KF9N25P/F
Fig 7. C - VDS
104
103 Ciss
102 Coss
101
0
Crss
5 10 15 20 25 30 35 40
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
102 Operation in this
area is limited by RDS(ON)
101
(KF9N25P)
10µs
100µs
1ms
100 10ms
10-1
Tc= 25 C
Tj = 150 C
102 Single pulse
100
101
DC
102
Drain - Source Voltage VDS (V)
103
Fig11. ID - Tj
12
10
8
6
4
2
0
25 50 75 100 125 150
Junction Temperature Tj ( C)
2010. 12. 3
Revision No : 0
12
ID=9A
10
Fig8. Qg- VGS
8
6
VDS = 200V
4
2
0
0 2 4 6 8 10 12 14 16
Gate - Charge Qg (nC)
Fig10. Safe Operation Area
102 Operation in this
area is limited by RDS(ON)
101
100
(KF9N25F)
10µs
100µs
1ms
10ms
10-1
Tc= 25 C
Tj = 150 C
102 Single pulse
100
101
DC
102
Drain - Source Voltage VDS (V)
103
4/7
Free Datasheet http://www.nDatasheet.com
4페이지 KF9N25P/F
Fig17. Source - Drain Diode Reverse Recovery and dv /dt
IF
0.5 VDSS
10V
DUT
driver
VGS
VDS
ISD
(DUT)
IS
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2010. 12. 3
Revision No : 0
7/7
Free Datasheet http://www.nDatasheet.com
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
KF9N25D | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF9N25F | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |