24N06 Datasheet PDF - ON Semiconductor
| Part Number | 24N06 | |
| Description | NTD24N06 | |
| Manufacturers | ON Semiconductor | |
| Logo |  |
|
|
There is a preview and 24N06 download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
Preview 1 page No Preview Available !
NTD24N06
Power MOSFET
60 Volt, 24 Amp
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C, TJ = 150°C
− Continuous @ TA = 25°C, TJ = 175°C
− Continuous @ TA = 100°C, TJ = 175°C
− Single Pulse (tpv10 ms), TJ = 175°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
ID
IDM
PD
TJ, Tstg
60
60
"20
"30
24
27
19
80
62.5
0.42
1.88
1.36
−55 to
+175
Vdc
Vdc
Vdc
Adc
Adc
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
L = 1.0 mH, IL(pk) = 18 A, VDS = 60 Vdc)
EAS 162 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
2.4
80
110
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.
2. When surface mounted to an FR−4 board using the minimum recommended
pad size.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 4
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
32 mW
ID MAX
24 A
N−Channel
D
G
S
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
4
1
Gate
2
Drain
3
Source
4
Drain
1
2
3
DPAK
CASE 369D
(Straight Lead)
STYLE 2
12 3
Gate Drain Source
Y
WW
24N06
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTD24N06/D
Free Datasheet http://www.Datasheet4U.com
|
| |
 
NTD24N06
12 1000
10
8
Q1
6
QT
Q2
VGS
4
2
0
04
ID = 24 A
TJ = 25°C
8 12 16 20 24 28
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
100
tr
td(off)
10
td(on)
tf
VDS = 30 V
ID = 24 A
VGS = 10 V
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
24
VGS = 0 V
20 TJ = 25°C
16
12
8
4
0
0.6 0.68 0.76 0.84 0.92
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 ms. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RqJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
http://onsemi.com
5
Free Datasheet http://www.Datasheet4U.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 24N06 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 24N06.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| 24N06 | The function is NTD24N06. ON Semiconductor | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
24N0
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||