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PDF K9F1G08U0D Data sheet ( Hoja de datos )
| Número de pieza | K9F1G08U0D | |
| Descripción | 1Gb NAND Flash | |
| Fabricantes | Samsung | |
| Logotipo |  |
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Rev. 1.1, Nov. 2010
K9F1G08U0D
1Gb NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved.
-1-
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1 page  
K9F1G08U0D
datasheet
1.4Pin Configuration (TSOP1)
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
K9F1G08U0D-SCB0/SIB0
48-pin TSOP1
Standard Type
12mm x 20mm
48 N.C
47 N.C
46 N.C
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 N.C
38 N.C
37 Vcc
36 Vss
35 N.C
34 N.C
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 N.C
26 N.C
25 N.C
Rev. 1.1
FLASH MEMORY
1.4.1 Package Dimensions
48-PIN LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220AF
20.00±0.20
0.787±0.008
#1 #48
Unit :mm/Inch
#24
0~8°
0.45~0.75
0.018~0.030
18.40±0.10
0.724±0.004
#25
1.00±0.05
0.039±0.002
01..02407MAX
0.05
0.002
MIN
(
0.50
0.020
)
-5-
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5 Page 
K9F1G08U0D
datasheet
Rev. 1.1
FLASH MEMORY
2.1 Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
K9F1G08U0D-SCB0
K9F1G08U0D-SIB0
K9F1G08U0D-SCB0
K9F1G08U0D-SIB0
Symbol
VCC
VIN
VI/O
TBIAS
TSTG
IOS
Rating
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to Vcc + 0.3 (< 4.6V)
-10 to +125
-40 to +125
-65 to +150
5
NOTE :
1) Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Unit
V
°C
°C
mA
2.2 Recommended Operating Conditions
(Voltage reference to GND, K9F1G08U0D-SCB0 :TA=0 to 70°C, K9F1G08U0D-SIB0:TA=-40 to 85°C)
Parameter
Symbol
K9F1G08U0D(3.3V)
Min Typ.
Supply Voltage
VCC 2.7 3.3
Supply Voltage
VSS 0 0
Max
3.6
0
Unit
V
V
2.3 DC And Operating Characteristics(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Operating
Current
Page Read with Serial
Access
Program
Erase
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
ICC1
ICC2
ICC3
ISB1
ISB2
ILI
ILO
tRC=25ns
CE=VIL, IOUT=0mA
-
-
CE=VIH, WP=0V/VCC
CE=VCC-0.2, WP=0V/VCC
VIN=0 to Vcc(max)
VOUT=0 to Vcc(max)
Input High Voltage
VIH(1)
-
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
VIL(1)
VOH
VOL
IOL(R/B)
-
K9F1G08U0D :IOH=-400μA
K9F1G08U0D :IOL=2.1mA
K9F1G08U0D :VOL=0.4V
NOTE :
1) VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less
2) Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
K9F1G08U0D(3.3V)
Min Typ Max
- 20 35
- -1
- 10 80
- - ±10
- - ±10
0.8xVcc
-
VCC
+0.3
-0.3 - 0.2XVcc
2.4 -
-
- - 0.4
8 10 -
Unit
mA
μA
V
mA
- 11 -
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