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부품번호 | 3SK231 기능 |
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기능 | MOS FIELD EFFECT TRANSISTOR | ||
제조업체 | NEC | ||
로고 | |||
전체 7 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK231
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low Noise Figure NF = 2.0 dB TYP. (@ = 900 MHz)
• High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)
• Enhancement Typ.
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Small Package : 4 Pins Mini Mold Package. (SC-61)
PACKAGE DIMENSIONS
(Unit: mm)
+0.2
2.8 −0.3
+0.2
1.5 −0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSX
18
Gate1 to Source Voltage
VG1S
±8 (±10)*
Gate2 to Source Voltage
VG2S
±8 (±10)*
Gate1 to Drain Voltage
VG1D
18
Gate2 to Drain Voltage
VG2D
18
Drain Current
ID 25
Total Power Dissipation
PD
200
Channel Temperature
Tch
125
Storage Temperature
Tstg −55 to +125
*RL ≥ 10 kΩ
V
V
V
V
V
mA
mW
°C
°C
5° 5°
5° 5°
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltages or fields.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10030EJ01V0DS (1st edition)
(Previous No. P10588EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
The mark ! shows major revised points.
NEC Corporation 1993
NEC Compound Semiconductor Devices 2001
Free Datasheet http://www.Datasheet4U.com
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
ID = 10 mA
(at VDS = 6 V
2.0 VG2S = 4.5 V)
f = 1 MHz
1.5
1.0
0.5
0 1.0 2.0 3.0 4.0 5.0
VG2S-Gate2 to Source Voltage-V
3SK231
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
f = 900 MHz
20 ID = 10 mA
(at VDS = 6 V
VG2S = 4.5 V)
10
Gps
50
−10
−20
00
NF
1.0 2.0 3.0 4.0
VG2S-Gate2 to Source Voltage-V
5.0
4 Data Sheet PU10030EJ01V0DS
Free Datasheet http://www.Datasheet4U.com
4페이지 3SK231
Business issue
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected]
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
TEL: +82-2-528-0301 FAX: +82-2-528-0302
NEC Electron Devices European Operations http://www.nec.de/
TEL: +49-211-6503-101 FAX: +49-211-6503-487
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
Technical issue
NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: [email protected] FAX: +81-44-435-1918
0110
Free Datasheet http://www.Datasheet4U.com
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ 3SK231.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
3SK231 | MOS FIELD EFFECT TRANSISTOR | NEC |
3SK233 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |