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PDF G16N50C Data sheet ( Hoja de datos )
| Número de pieza | G16N50C | |
| Descripción | SIHG16N50C | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Power MOSFET
SiHG16N50C
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
560 V
VGS = 10 V
68
17.6
21.8
Single
TO-247AC
0.38
D
FEATURES
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• Gate Charge Improved
• Trr/Qrr Improved
• Compliant to RoHS Directive 2002/95/EC
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-247AC
SiHG16N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentc
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 16 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
LIMIT
500
± 30
16
10
40
2
320
250
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91418
S10-1355-Rev. A, 14-Jun-10
www.vishay.com
1
Free Datasheet http://www.0PDF.com
1 page  
SiHG16N50C
Vishay Siliconix
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
(Thermal Response)
10-3
10-2
t1, Rectangular Pulse Duration (s)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
0.1 1
Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
VDS
L
Driver
RG
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD A
Fig. 11a - Unclamped Inductive Test Circuit
V DS
tp
IAS
Fig. 11b - Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig. 12a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
D.U.T.
+
-VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 12b - Gate Charge Test Circuit
Document Number: 91418
S10-1355-Rev. A, 14-Jun-10
www.vishay.com
5
Free Datasheet http://www.0PDF.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet G16N50C.PDF ] | |
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