|
|
PDF AUIRF6215S Data sheet ( Hoja de datos )
| Número de pieza | AUIRF6215S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AUIRF6215S (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
AUTOMOTIVE GRADE
AUIRF6215S
Features
l Advanced Planar Technology
l Low On-Resistance
l P-Channel
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
HEXFET® Power MOSFET
D VDSS
RDS(on) max.
S ID
-150V
0.29
-13A
G
Gate
D
S
D
G
D2Pak
AUIRF6215S
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
cContinuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
VGS
EAS
IAR
EAR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
hRJC
Junction-to-Case
gRJA Junction-to-Ambient (PCB Mount, steady state)
Max.
-13
-9.0
-44
3.8
110
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
300
Typ.
–––
–––
Max.
1.4
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
March 29, 2013
Free Datasheet http://www.Datasheet4U.com
1 page  
AUIRF6215S
5 www.irf.com © 2013 International Rectifier
March 29, 2013
Free Datasheet http://www.Datasheet4U.com
5 Page 
AUIRF6215S
Ordering Information
Base part number Package Type
AUIRF6215STRL
D2Pak
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
800
800
Complete Part Number
AUIRF6215S
AUIRF6215STRL
AUIRF6215STRR
11 www.irf.com © 2013 International Rectifier
March 29, 2013
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRF6215S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AUIRF6215 | Power MOSFET ( Transistor ) | International Rectifier |
| AUIRF6215S | Power MOSFET ( Transistor ) |  Infineon |
| AUIRF6215S | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |