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PDF AUIRF7734M2TR Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7734M2TR | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96413A
AUTOMOTIVE GRADE AUIRF7734M2TR
AUIRF7734M2TR1
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead Free, RoHS Compliant and Halogen Free
• Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
40V
RDS(on) typ.
3.8mΩ
max.
4.9mΩ
ID (Silicon Limited)
72A
Qg 48nC
DG
S
S
D
Applicable DirectFET® Outline and Substrate Outline
M 2 DirectFET®ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7734M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7734M2 to offer substantial system level savings and performance improve-
ment specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust
and reliable device for high current automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
PD @TC = 25°C
PEDAS@TA = 25°C
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
gPulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃgAvalanche Current
gRepetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
40
± 20
72
51
17
288
46
2.5
56
164
See Fig. 18a, 18b, 16, 17
270
-55 to + 175
V
A
W
mJ
A
mJ
°C
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
Parameter
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Junction-to-PCB Mounted
fLinear Derating Factor
Typ.
–––
12.5
20
–––
1.0
Max.
60
–––
–––
3.3
–––
0.30
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
04/19/12
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1 page  
AUIRF7734M2TR/TR1
4.0 1000
3.5 TJ = -40°C
100 TJ = 25°C
3.0 TJ = 175°C
2.5 10
2.0
ID = 1.0A
ID = 1.0mA
ID = 250μA
1.5 ID = 100μA
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs. Junction Temperature
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
150
TJ = 25°C
100000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
100 10000
TJ = 175°C
50
VDS = 5V
380μs PULSE WIDTH
0
0 20 40 60 80 100 120
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance vs. Drain Current
14
12
ID= 43A
VDS= 32V
VDS= 20V
VDS= 8V
10
8
6
4
2
0
0 15 30 45 60 75
QG, Total Gate Charge (nC)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
1000
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
75
60
45
30
15
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
5
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5 Page 
AUIRF7734M2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its prod-
ucts and services at any time and to discontinue any product or services without notice. Part numbers designated
with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale
supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this informa-
tion with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages,
and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the
design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,
are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for
compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific
IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
www.irf.com
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7734M2TR.PDF ] | |
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