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PDF 54N06T Data sheet ( Hoja de datos )
| Número de pieza | 54N06T | |
| Descripción | PHP54N06T | |
| Fabricantes | NXP Semiconductors | |
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PHP54N06T
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 February 2001
Product specification
M3D307
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP54N06T in SOT78 (TO-220AB).
2. Features
s Low on-state resistance
s 175 °C rated.
3. Applications
s DC to DC converters
s Switched mode power supplies.
c
4. Pinningc information
Table 1: Pinning - SOT78, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
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Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
55 − − V
Tj = −55 °C
50 − − V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
234V
1−−V
− − 4.4 V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
− 17 20 mΩ
− − 40 mΩ
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VDD = 44 V; ID = 40 A;
VGS = 10 V; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
from drain lead 6 mm from
package to centre of die
−
−
−
−
−
−
−
−
−
−
−
36
8.4
11.5
1200
290
179
15
74
70
40
4.5
−
−
−
1592
356
240
−
−
−
−
−
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
from contact screw on
mounting base to centre of
die
−
3.5 −
nH
Ls
internal source inductance from source lead to source
−
bond pad
7.5 −
nH
9397 750 08022
Product specification
Rev. 01 — 14 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
5 of 13
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11. Data sheet status
PHP54N06T
N-channel enhancement mode field-effect transistor
Datasheet status
Objective specification
Product status
Development
Preliminary specification Qualification
Product specification
Production
Definition [1]
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
9397 750 08022
Product specification
Rev. 01 — 14 February 2001
© Philips Electronics N.V. 2001 All rights reserved.
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