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PDF SPGP0265A Data sheet ( Hoja de datos )

Número de pieza SPGP0265A
Descripción POWER SWITCH
Fabricantes SemiHow 
Logotipo SemiHow Logotipo



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No Preview Available ! SPGP0265A Hoja de datos, Descripción, Manual

May 2013
SPGP0265A
( SEMIHOW POWER SWITCH )
FEATURES
‰ Variable frequency operation
‰ Low Start-up Current(Typ.100uA )
‰ Pulse by Pulse Current Limiting
‰ Over Current Protection
‰ Over Voltage Protection (Min. 20)
‰ Internal Thermal Shutdown Function
‰ Under Voltage Lockout
‰ Internal High Voltage Sense FET
‰ Auto-Restart Mode
‰ Frequency Modulation for low EMI
‰ Advanced Burst-Mode Operation
APPLICATION
‰ SMPS for STB, SVR, DVD & DVCD
‰ SMPS for Printer, Facsimile & Scanner
‰ Adaptor
DESCRIPTION
The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components.
The SemiHow Power Switch consists of a high voltage power SenseFET and a current mode PWM IC.
It has a basic platform well suited for the cost effective design in either a flyback converter
INTERNAL BLOCK DIAGRAM
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Free Datasheet http://www.Datasheet4U.com

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SPGP0265A pdf
Typical Characteristics ( SenseFET Part )
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
100
* Notes :
1. 300us Pulse Test
2. TC = 25oC
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
10
8
V = 10V
GS
6
4 VGS = 20V
2
Note : T = 25oC
J
0
01234
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
700
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
600 C = C
rss gd
500
Ciss
400
300 Coss
* Note ;
200 1. VGS = 0 V
2. f = 1 MHz
Crss
100
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
1 150oC
25oC
-25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
0.1
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.01
0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 130V
10 VDS = 325V
8 VDS = 520V
6
4
2
* Note : ID = 2.0A
0
0 2 4 6 8 10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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