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PDF MXP6006DT Data sheet ( Hoja de datos )
| Número de pieza | MXP6006DT | |
| Descripción | (MXP6006DT / MXP6006DF) 60V N-Channel MOSFET | |
| Fabricantes | MaxPower | |
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60V N-Channel MOSFET
Applications:
● Power Supply
● DC-DC Converters
MXP6006DT, MXP6006DF Datasheet
VDS
60V
RDS(ON)(MAX)
6mΩ
IDa
115A
Features:
● Lead Free
● Low RDS(ON) to Minimize Conductive Loss
● Low Gate Charge for Fast Switching Application
● Optimized V(BR)DSS Capability
Ordering Information
Park Number
Package
MXP6006DT
TO-220
MXP6006DF
TO-263
Brand
MXP
MXP
TO-263
Absolute Maximum Ratings
Symbol
TC=25℃ unless otherwise specified
Parameter
Value
VDSS Drain-to-Source Voltage
IDa Continuous Drain Current
IDM Pulsed Drain Current @VG=10V
60
115
459
PD
Power Dissipation
Derating Factor above 25℃
158
1.05
VGS Gate-to-Source Voltage
+/-20
EAS
Single Pulse Avalanche Energy
(L=1mH)
449
IAS Pulsed Avalanche Energy
Figure 9
Tj and Tstg Operating Junction and Storage Temperature Range
-55 to 175
Unit
V
A
W
W/℃
V
mJ
A
℃
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case
Min Typ Max Unit
Test Conditions
Water cooled heatsink, PD
- - 0.95 ℃/W adjusted for a peak junction
Temperature of 175℃
Note:
a: Calculated continuous current based upon maximum allowable junction temperature +175℃. Package limitation current is 80A.
©MaxPower Semiconductor Inc.
MXP6006DT Ver 1.0 Sep. 2011
Page1
Free Datasheet http://www.Datasheet4U.com
1 page  
Disclaimers:
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©MaxPower Semiconductor Inc.
Page5
MXP6006DT Ver 1.0 Sep. 2011
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MXP6006DT.PDF ] | |
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