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IRF6620TRPBF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF6620TRPBF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 IRF6620TRPBF 기능
기능 Power MOSFET ( Transistor )
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IRF6620TRPBF 데이터시트, 핀배열, 회로
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97092
IRF6620PbF
IRF6620TRPbF
DirectFET™ Power MOSFET ‚
VDSS RDS(on) max Qg(typ.)
20V 2.7m@VGS = 10V 28nC
3.6m@VGS = 4.5V
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ SX ST
MQ MX MT
MX
DirectFET™ ISOMETRIC
Description
The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6620PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6620PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620PbF offers particu-
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 70°C
PD @TA = 25°C
EAS
IAR
Gate-to-Source Voltage
kContinuous Drain Current, VGS @ 10V
ÃhContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
kPower Dissipation
hPower Dissipation
hPower Dissipation
fSingle Pulse Avalanche Energy
ÃgAvalanche Current
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
hlJunction-to-Ambient
ilJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Case
Junction-to-PCB Mounted
Max.
20
±20
150
27
22
220
89
1.8
2.8
39
22
0.017
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
Notes  through Š are on page 2
www.irf.com
1
5/11/06
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IRF6620TRPBF pdf, 반도체, 판매, 대치품
IRF6620PbF
1000.0
100.0
10.0
TJ = 150°C
1.0
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
150
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
01
1msec
10msec
10 100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
120
2.0
90 ID = 250µA
60
1.5
30
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
Fig 9. Maximum Drain Current vs. Case Temperature
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
ττCAτ
Ri (°C/W)
1.28011
8.72556
τi (sec)
0.000322
0.164798
τ3 τ3
τ4 τ4
21.75
2.2576
13.251 69
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF6620TRPBF 전자부품, 판매, 대치품
IRF6620PbF
DirectFET™ Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET™ Part Marking
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX MIN MAX
A 6.25 6.35 0.246 0.250
B 4.80 5.05 0.189 0.201
C 3.85 3.95 0.152 0.156
D 0.35 0.45 0.014 0.018
E 0.68 0.72 0.027 0.028
F 0.68 0.72 0.027 0.028
G 1.38 1.42 0.054 0.056
H 0.80 0.84 0.032 0.033
J 0.38 0.42 0.015 0.017
K 0.88 1.01 0.035 0.039
L 2.28 2.41 0.090 0.095
M 0.616 0.676 0.0235 0.0274
R 0.020 0.080 0.0008 0.0031
P 0.08 0.17 0.003 0.007
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IRF6620TRPBF

Power MOSFET ( Transistor )

International Rectifier
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