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IRF6633PBF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF6633PBF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 IRF6633PBF 기능
기능 Power MOSFET ( Transistor )
제조업체 International Rectifier
로고 International Rectifier 로고


IRF6633PBF 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



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IRF6633PBF 데이터시트, 핀배열, 회로
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97083
IRF6633PbF
IRF6633TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±20V max 4.1m@ 10V 7.0m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC 4.0nC 1.2nC 32nC 8.8nC 1.8V
MP
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6633PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
20 V
±20
16
13 A
59
132
41 mJ
13 A
20 12
15
ID = 16A
10 ID= 13A
VDS= 16V
VDS= 10V
8
10
TJ = 125°C
5
0
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6
4
2
0
0 4 8 12 16 20 24
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.51mH, RG = 25, IAS = 13A.
1
5/3/06
Free Datasheet http://www.Datasheet4U.com




IRF6633PBF pdf, 반도체, 판매, 대치품
IRF6633PbF
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1
0.1
0.1
2.5V
1
60µs PULSE WIDTH
Tj = 25°C
10 100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
100
TJ = 150°C
TJ = 25°C
10 TJ = -40°C
1
VDS = 10V
60µs PULSE WIDTH
0.1
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
2.5V
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0
ID = 16A
1.5
VGS = 4.5V
VGS = 10V
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
20
TJ = 25°C
16
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
12
8
4
0 20 40 60 80 100
ID, Drain Current (A)
Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
www.irf.com
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IRF6633PBF 전자부품, 판매, 대치품
IRF6633PbF
+
‚
-

RG
D.U.T +
ƒ
-
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
di/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductoorr CCuurrernetnt
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
VDD
ISD
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, MP Outline
(Medium Size Can, P-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
www.irf.com
D
S
G
S
D
D
D
G- Gate
D- Drain
S- Source
7
Free Datasheet http://www.Datasheet4U.com

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IRF6633PBF

Power MOSFET ( Transistor )

International Rectifier
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