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IRF6636TRPBF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF6636TRPBF은 전자 산업 및 응용 분야에서
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부품번호 IRF6636TRPBF 기능
기능 Power MOSFET ( Transistor )
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IRF6636TRPBF 데이터시트, 핀배열, 회로
PD - 97219
IRF6636PbF
IRF6636TRPbF
l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±20V max 3.2m@ 10V 4.6m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
18nC 6.1nC 1.9nC 7.3nC 10nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
ST
DirectFET™ ISOMETRIC
Description
The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6636PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6636PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
20 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
±20
18
15 A
81
140
28 mJ
14 A
20 6.0
ID = 18A
5.0 ID= 14A VDS= 16V
15 4.0 VDS= 10V
10
TJ = 125°C
5
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
3.0
2.0
1.0
0.0
0
10 20 30
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.27mH, RG = 25, IAS = 14A.
1
05/29/06
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IRF6636TRPBF pdf, 반도체, 판매, 대치품
IRF6636PbF
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
1
0.1
2.5V
1
60µs PULSE WIDTH
Tj = 25°C
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
100
VDS = 10V
60µs PULSE WIDTH
TJ = 150°C
10
TJ = 25°C
TJ = -40°C
1
0.1
1234
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
Coss
Crss
10
1
0.1
2.5V
60µs PULSE WIDTH
Tj = 150°C
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
1.5
ID = 18A
1.0
VGS = 10V
VGS = 4.5V
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
50
TJ = 25°C
40 Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
30 Vgs = 5.0V
Vgs = 10V
20
10
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
0
0 20 40 60 80 100 120 140
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
www.irf.com
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IRF6636TRPBF 전자부품, 판매, 대치품
IRF6636PbF
+
‚
-

RG
D.U.T +
ƒ
-
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
di/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductoorr CCuurrernetnt
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
VDD
ISD
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, ST Outline ƒ
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
www.irf.com
G = GATE
D = DRAIN
S = SOURCE
D
S
G
S
D
D
D
7
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Power MOSFET ( Transistor )

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