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PDF IRF6637TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6637TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l RoHS Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
PD - 97088
IRF6637PbF
IRF6637TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 5.7mΩ@ 10V 8.2mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
11nC 4.0nC 1.0nC 20nC 9.9nC 1.8V
MP
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6637PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6637PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including RDS(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
30 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
±20
14
11 A
59
110
31 mJ
11 A
25 12
20
ID = 14A
10 ID= 11A
VDS= 24V
VDS= 15V
8
15
TJ = 125°C
10
5
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6
4
2
0
0 4 8 12 16 20 24
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.52mH, RG = 25Ω, IAS = 11A.
1
5/5/06
Free Datasheet http://www.Datasheet4U.com
1 page  
1000.0
100.0
10.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
1.0
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
50
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
160
120
IRF6637PbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10 1msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.10
1.00
10msec
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
2.0
ID = 250µA
1.5
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ, Junction Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 4.9A
7.5A
BOTTOM 11A
80
40
www.irf.com
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
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| PDF Descargar | [ Datasheet IRF6637TRPBF.PDF ] | |
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