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부품번호 | IRF6810STRPBF 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 9 페이지수
PD -96393
IRF6810STRPbF
IRF6810STR1PbF
l RoHS Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
l Footprint compatible to DirectFET
DirectFET®plus Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 4.0mΩ @ 10V 5.6mΩ @ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
7.4nC 2.7nC 0.98nC 12nC 8.9nC 1.6V
DGS
D
Applicable DirectFET Outline and Substrate Outline
S1 DirectFET®plus ISOMETRIC
S1 S2 SB
M2 M4
L4 L6 L8
Description
The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6810STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6810STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
15
ID = 16A
10
TJ = 125°C
5
TJ = 25°C
0
0 2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Max.
25
±16
16
13
50
130
51
13
Units
V
A
mJ
A
14.0
12.0 ID= 13A
10.0
8.0
VDS= 20V
VDS= 13V
VDS= 5V
6.0
4.0
2.0
0.0
0
5 10 15 20
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.601mH, RG = 50Ω, IAS = 13A.
1
08/08/11
Free Datasheet http://www.Datasheet4U.com
IRF6810STRPbF
1000
100
TOP
10 BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
2.3V
1
0.1 2.3V
0.01
0.1
≤60μs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
TJ = 150°C
100 TJ = 25°C
TJ = -40°C
10
1
VDS = 15V
≤60μs PULSE WIDTH
0.1
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
Coss
100 Crss
10
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
2.3V
1 2.3V
0.1
0.1
≤60μs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
1.6
ID = 16A
1.4
VGS = 10V
VGS = 4.5V
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
35.0
Vgs = 3.5V
30.0 Vgs = 4.5V
Vgs = 5.0V
25.0
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
20.0 Vgs = 12V
Vgs = 15V
15.0
TJ = 25°C
10.0
5.0
0.0
0 15 30 45 60 75 90 105 120 135
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
www.irf.com
Free Datasheet http://www.Datasheet4U.com
4페이지 IRF6810STRPbF
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
-
RG
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
*
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD
** +
• ISD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
V*G*S*=10V
VDD
ISD
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
DirectFET®plus Board Footprint, S1 Outline (Small Size Can).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET plus.
This includes all recommendations for stencil and substrate designs.
www.irf.com
D
GS
D
G=GATE
D=DRAIN
S=SOURCE
D
D
7
Free Datasheet http://www.Datasheet4U.com
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
IRF6810STRPBF | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |