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PDF IRF6810STR1PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6810STR1PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD -96393
IRF6810STRPbF
IRF6810STR1PbF
l RoHS Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
l Footprint compatible to DirectFET
DirectFET®plus Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 4.0mΩ @ 10V 5.6mΩ @ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
7.4nC 2.7nC 0.98nC 12nC 8.9nC 1.6V
DGS
D
Applicable DirectFET Outline and Substrate Outline
S1 DirectFET®plus ISOMETRIC
S1 S2 SB
M2 M4
L4 L6 L8
Description
The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6810STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6810STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
15
ID = 16A
10
TJ = 125°C
5
TJ = 25°C
0
0 2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Max.
25
±16
16
13
50
130
51
13
Units
V
A
mJ
A
14.0
12.0 ID= 13A
10.0
8.0
VDS= 20V
VDS= 13V
VDS= 5V
6.0
4.0
2.0
0.0
0
5 10 15 20
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.601mH, RG = 50Ω, IAS = 13A.
1
08/08/11
Free Datasheet http://www.Datasheet4U.com
1 page  
IRF6810STRPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100 100
1msec 100μsec
10
TJ = 150°C
TJ = 25°C
1 TJ = -40°C
VGS = 0V
0.1
0.3 0.5 0.7 0.9 1.1 1.3
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
10 DC 10msec
1
Ta = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
1
10 100
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area
60 2.2
50 2.0
40 1.8
1.6 ID = 25μA
30
1.4
20
1.2
10 1.0
0
25
50 75 100 125
TC , Case Temperature (°C)
150
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
220
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
200 ID
180 TOP 1.6A
160
2.4A
BOTTOM 13A
140
120
100
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
Free Datasheet http://www.Datasheet4U.com
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