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PDF IRF7737L2TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7737L2TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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• Advanced Process Technology
• Optimized for Industrial Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead Free, RoHS Compliant and Halogen Free
PD - 96414
IRF7737L2TRPbF
IRF7737L2TR1PbF
DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
40V
1.5mΩ
1.9mΩ
156A
89nC
SSS
D G SSS D
Applicable DirectFET® Outline and Substrate Outline
SB SC
M2
M4
L6 DirectFET® ISOMETRIC
L4 L6 L8
Description
The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to
achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package
allows dual sided cooling to maximize thermal transfer.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the IRF7737L2PbF to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to
achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃgAvalanche Current
gRepetitive Avalanche Energy
40
± 20
156
110
31
315
624
83
3.3
104
386
See Fig.18a, 18b, 16, 17
V
A
W
mJ
A
mJ
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
270
-55 to + 175
°C
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Parameter
Junction-to-PCB Mounted
fLinear Derating Factor
Typ.
–––
12.5
20
–––
–––
Max.
45
–––
–––
1.8
0.5
0.56
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
10/27/11
Free Datasheet http://www.Datasheet4U.com
1 page  
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
100
1msec
10 10msec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1
0.10 1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 13. Maximum Safe Operating Area
10
IRF7737L2TR/TR1PbF
450
400 ID
TOP 13A
350 24A
300 BOTTOM 94A
250
200
150
100
50
0
25 50 75 100 125 150 175
Fig 14. MaSxtairmtinugmTJA,vJaulnacntiocnhTeeEmnpeerragtuyrevs(°.CT) emperature
1
0.1
0.01
0.001
1E-006
D = 0.50
0.20
0.10
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
Ri (°C/W)
0.00501
τi (sec)
18.81575
τCτ 0.93035
0.022853
τ3 τ3
τ4τ4
0.17759
0.000126
0.68769 0.00313
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
1000
100
10
Duty Cycle = Single Pulse
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
www.irf.com
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
1.0E-01
5
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