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부품번호 7MBP50NA060 기능
기능 New Intelligent Power Modules
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7MBP50NA060 데이터시트, 핀배열, 회로
New Intelligent Power Modules (R Series)
Atsushi Yamaguchi
Hiroaki Ichikawa
1. Introduction
The equipment of power electronics application is
comprised of general use inverters, numeric control
(NC) machine tools, and industrial robots. Recently,
the requirements of lower noise, higher efficiency,
advanced functions, lower price, and downsizing for
these items have been growing.
The power devices used as the equipment of power
electronics applications are progressing toward lower
loss and higher frequency, and the IGBT (insulated
gate bipolar transistor) rather than the bipolar transis-
tor is gaining popularity.
On the other hand, together with lowered loss for
the IGBT, intelligence is achieved by locating the
peripheral circuits such as the driving circuit and
various protective circuits inside the module. It then
becomes possible to shorten the design time at the
power circuit and contributes to downsizing and ad-
vanced equipment function.
In keeping step with the trends of making the
power devices intelligent, Fuji Electric announced the
bipolar transistor type of intelligent power modules
(BJT-IPM) in 1989. In 1992, the J series of IGBT-IPM
(J-IPM) that pursued lower loss was developed and in
1995 the N series of IGBT-IPM (N-IPM) aimed at
lower price and lower noise was developed and pro-
duced. This time, the R series of IGBT-IPM (R-IPM)
pursues higher cost performance, higher reliability and
advanced functions.
The line-up and features of Fuji Electric’s IGBT-
IPMs and the R-IPM are introduced in the following.
2. Fuji Electric’s Conventional IGBT-IPM Line-Up
and Problems
The line-up, performances and features of both the
J-IPM and N-IPM are shown in Table 1. The J-IPM
was developed with particular attention to low loss.
The N-IPM realized low noise (soft switching) and low
loss in order to respond to the market needs of EMC
(electro magnetic compatibility) regulations and to
match the CE mark. Furthermore, the N-IPM is an
IPM with a lower price and higher reliability made
possible by the adoption of new construction and new
materials. The integrated functions are shown in
Table 1 The J-IPM and the N-IPM
Series
J-IPM
N-IPM
Type
6MBP15JB060
6MBP20JB060
6MBP100JA060
6MPB150JA060
6MBP200JA060
6MBP100JA120
7MBP50JB060
7MBP75JB060
7MBP50JA120
6MBP50NA060
6MPB75NA060
6MPB100NA060
7MBP50NA060
7MBP75NA060
7MBP100NA060
VCES (V)
600
600
600
600
600
1,200
600
600
1,200
600
600
600
600
600
600
Inverter
IC (A)
15
20
100
150
200
100
50
75
50
50
75
100
50
75
100
PC (W)
40
50
240
450
600
600
150
195
240
198
320
400
198
320
400
Dynamic brake
VCES (V)
IC (A)
––
––
––
––
––
––
600 30
600 30
1,200
15
––
––
––
600 30
600 50
600 50
PC (W)
80
80
80
120
198
198
Features
Low loss
High speed switching
Low loss
Soft switching
High reliability
New Intelligent Power Modules (R Series)
27
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7MBP50NA060 pdf, 반도체, 판매, 대치품
Fig.4 Internal equivalent circuit of the R-IPM (a 7 set example)
VccU
VinU
GNDU
VccV
VZ
VinV
GNDV
VccW
VZ
VinW
GNDW
Vcc
VZ
VinX
GND
VZ
VinY
VZ
drive
circuit
drive
circuit
drive
circuit
drive
circuit
drive
circuit
P
U
V
W
VinZ
VZ
VinDB
VZ
ALM
RALM
drive
circuit
drive
circuit
overheat protection
circuit
B
N
Function in drive circuit
Drive circuit for IGBT
Short circuit protection
Under voltage protection
Overcurrent protection
Device for overheating protection
ment are introduced below.
4.1 Improvement in performance of overheat protection
function
In addition to the conventional case overheat
protection, the device overheat protection function is
integrated in the R-IPM.
The conventional case overheat protection function
is indispensable. It was certainly effective against
relatively slow temperature risings when overload
occurred or a fan broke down.
However, since protection is insufficient against
the phenomenon of rapid temperature rise of the IGBT
chips, like the motor lock mode mentioned in section 2,
the T j detecting overheat protection function is applied
in the R-IPM.
In an experiment simulation a motor lock mode,
the junction temperature of the IGBT chip which
located on the farthest position from the sensor and
temperature of the sensor were measured when the
IGBT chip was applied power loss and heated using a
conventional IPM. The results are shown in Fig. 5.
Since the temperature of the IGBT chip exceeded
150°C before the temperature sensor reached the
30
Fig.5 Temperature rise of the IGBT chip and the temperature
sensor
200
175
IGBT chip
150
125 Temperture sensor Protection zone for
case overheating
100
75
50
25
0
0 2 4 6 8 10 12 14 16
Time min
Fig.6 Overheating protection device
IC
Constant-current
source
Temperature
detection
IGBT
Device for temperature
detection
temperature for case protection, there is the possibility
that the IGBT chips may be destroyed if this operating
condition continues. It is clear that the device
overheat protection function is indispensable.
The device overheat protection function differs
from the case overheat protection of conventional
IPMs. It protects against thermal destruction of the
IGBT chips by directly detecting the junction tempera-
ture of the IGBT chips in which the temperature
sensor is embedded.
In order to achieve this function, the temperature
detection device is made on the IGBT chip as shown in
Fig. 6. Detection of the IGBT chips temperature is
performed utilizing the dependance of this device on
temperature.
This device is embedded by using poly-silicon on
insulator technology to prevent the influence of the
Vol. 44 No. 1 FUJI ELECTRIC REVIEW
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관련 데이터시트

부품번호상세설명 및 기능제조사
7MBP50NA060

New Intelligent Power Modules

Fuji
Fuji
7MBP50NA060-01

IGBT-IPM

Fuji Electric
Fuji Electric

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