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부품번호 | K3759 기능 |
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기능 | MOSFET ( Transistor ) - 2SK3759 | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 6 페이지수
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2SK3759
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3759
Switching Regulator Applications
unit
• Low drain-source ON resistance: RDS (ON) = 0.75 (typ.)
• High forward transfer admittance: |Yfs| = 6.5S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 500 V)
• Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
3.84 0.2
3.84 0.2
1010.5.5 mmaax x
44 .. 77 mmaxax
1.3
1.3
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
ID P
PD
EA S
IAR
EAR
Tc h
Tstg
500
500
±30
8
32
74
48
8
7.4
150
-55~150
Thermal Characteristics
Characteristics
Symbol
Max
V
V
V
W
mJ
A
mJ
°C
°C
Unit
11..55mmaxax
0.81
0.81 max
00..4455
2.25.544
1 23
2.7
2.7
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
SC-46
JEITA
TO-220AB
TOSHIBA
Weight : 2.0g(typ.)
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
1.68 °C/W
83.3 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 1.28 mH, IAR = 8 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
2
1
3
1 2004-02-26
Free Datasheet http://www.Datasheet4U.com
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RDS (ON) – Tc
5
COMMON SOURCE
PULSE TEST
4
3
2
4
ID = 8A
VGS = 10 V
1
2
0
−80 −40
0
40 80 120 160
CASE TEMPERATURE Tc (°C)
2SK3759
IDR – VDS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
10
5
3
1 VGS = 0, −1 V
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
DRAIN-SOURCE VOLTAGE VDS (V)
10000
CAPACITANCE – VDS
1000
100
Ciss
Coss
10 COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
3 5 10
Crss
30 50 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Tc
5
4
3
2
COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
−80 −40
0
40 80 120
CASE TEMPERATURE Tc (°C)
160
PD – Tc
80
60
40
20
0
0 40 80 120 160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500 20
400
300
200
100
0
0
VDS
VDD = 100 V
16
400 12
VGS
200
8
COMMON SOURCE
ID = 8 A
Tc = 25°C
4
PULSE TEST
0
10 20 30 40 50
TOTAL GATE CHARGE Qg (nC)
4 2004-02-26
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부품번호 | 상세설명 및 기능 | 제조사 |
K3757 | MOSFET ( Transistor ) - 2SK3757 | Toshiba Semiconductor |
K3758 | Silicon N Channel MOS Type Field Effect Transistor | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |