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AT49F001ANT 데이터시트 PDF




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부품번호 AT49F001ANT 기능
기능 Flash Memory
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AT49F001ANT 데이터시트, 핀배열, 회로
Features
Single-voltage Operation
– 5V Read
– 5V Reprogramming
Fast Read Access Time – 45 ns
Internal Program Control and Timer
Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout
– Two 8K Bytes Parameter Blocks
– Two Main Memory Blocks (32K Bytes, 64K Bytes)
Fast Erase Cycle Time – 3 Seconds
Byte-by-Byte Programming – 30 µs/Byte Typical
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
– 20 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
1-megabit
(128K x 8)
5-volt Only
Flash Memory
Description
The AT49F001A(N)(T) is a 5-volt only in-system reprogrammable Flash memory. Its
1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to
45 ns with power dissipation of just 110 mW over the industrial temperature range.
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
RESET
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
RESET
Data Inputs/Outputs
No Connect
PLCC Top View
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
A11
A9
A8
A13
A14
NC
WE
VCC
* RESET
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
AT49F001A
AT49F001AN
AT49F001AT
AT49F001ANT
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
Note: *This pin is a NC on the AT49F001AN(T)
3365C–FLASH–9/03
1
Free Datasheet http://www.Datasheet4U.com




AT49F001ANT pdf, 반도체, 판매, 대치품
SECTOR ERASE: As an alternative to a full chip erase, the device is organized into sectors
that can be individually erased. There are two 8K-byte parameter block sections and two main
memory blocks. The 8K-byte parameter block sections and the two main memory blocks can
be independently erased and reprogrammed. The Sector Erase command is a six bus cycle
operation. The sector address is latched on the falling WE edge of the sixth cycle while the
30H data input command is latched at the rising edge of WE. The sector erase starts after the
rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will auto-
matically time to completion.
BYTE PROGRAMMING: Once the memory array is erased, the device is programmed (to a
logical “0”) on a byte-by-byte basis. Please note that a data “0” cannot be programmed back to
a “1”; only erase operations can convert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle operation (please refer to the Command
Definitions table). The device will automatically generate the required internal program pulses.
The program cycle has addresses latched on the falling edge of WE or CE, whichever occurs
last, and the data latched on the rising edge of WE or CE, whichever occurs first. Program-
ming is completed after the specified tBP cycle time. The DATA polling feature may also be
used to indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device has one designated block that has
a programming lockout feature. This feature prevents programming of data in the designated
block once the feature has been enabled. The size of the block is 16K bytes. This block,
referred to as the boot block, can contain secure code that is used to bring up the system.
Enabling the lockout feature will allow the boot code to stay in the device while data in the rest
of the device is updated. This feature does not have to be activated; the boot block’s usage as
a write protected region is optional to the user. The address range of the boot block is 00000
to 03FFF for the AT49F001A(N) while the address range of the boot block is 1C000 to 1FFFF
for the AT49F001A(N)T.
Once the feature is enabled, the data in the boot block can no longer be erased or pro-
grammed with input voltage levels of 5.5V or less. Data in the main memory block can still be
changed through the regular programming method. To activate the lockout feature, a series of
six program commands to specific addresses with specific data must be performed. Please
refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software method is available to determine if pro-
gramming of the boot block section is locked out. When the device is in the software product
identification mode (see Software Product Identification Entry and Exit sections) a read from
address location 00002H will show if programming the boot block is locked out for the
AT49F001A(N), and a read from address location 1C002H will show if programming the boot
block is locked out for the AT49F001A(N)T. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lockout feature has been activated and
the block cannot be programmed. The software product identification exit code should be used
to return to standard operation.
4 AT49F001A(N)(T)
3365C–FLASH–9/03
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AT49F001ANT 전자부품, 판매, 대치품
AT49F001A(N)(T)
DC and AC Operating Range
Operating Temperature (Case)
VCC Power Supply
Ind.
AT49F001A(N)(T)-45
-40° C - 85° C
5V ± 10%
AT49F001A(N)(T)-55
-40° C - 85° C
5V ± 10%
Operating Modes
Mode
CE OE WE RESET(6)
Ai
Read
Program/Erase(2)
Standby/Write Inhibit
Program Inhibit
Output Disable
Reset
Product Identification
VIL VIL VIH
VIL VIH VIL
VIH X(1) X
X X VIH
X VIL X
X VIH X
XXX
VIH
VIH
VIH
VIH
VIH
VIH
VIL
Ai
Ai
X
X
Hardware
VIL VIL VIH
A1 - A16 = VIL, A9 = VH,(3) A0 = VIL
A1 - A16 = VIL, A9 = VH,(3) A0 = VIH
Software(5)
A0 = VIL, A1 - A16 =VIL
A0 = VIH, A1 - A16 =VIL
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH, Device Code: 05H – AT49F001A(N), 04H – AT49F001A(N)T.
5. See details under Software Product Identification Entry/Exit.
6. This pin is not available on the AT49F001AN(T).
DC Characteristics
I/O
DOUT
DIN
High Z
High Z
High Z
Manufacturer Code(4)
Device Code(4)
Manufacturer Code(4)
Device Code(4)
Symbol
Parameter
ILI
ILO
ISB1
ISB2
ICC(1)
VIL
VIH
VOL
VOH1
VOH2
Note:
Input Load Current
Output Leakage Current
VCC Standby Current CMOS
VCC Standby Current TTL
VCC Active Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage CMOS
1. In the erase mode, ICC is 70 mA.
Condition
VIN = 0V to VCC
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC
CE = 2.0V to VCC
f = 5 MHz; IOUT = 0 mA
IOL = 2.1 mA
IOH = -400 µA
IOH = -100 µA; VCC = 4.5V
Min Max Units
10 µA
10 µA
50 µA
1 mA
20 mA
0.8 V
2.0 V
0.45 V
2.4 V
4.2 V
3365C–FLASH–9/03
7
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