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Datasheet 15N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 15N10 | N-Ch Enhancement Mode Power MOSFET TLC5930
SLLS528 – MARCH 2002
12-CHANNEL LED DRIVER
FEATURES D 0.2-mA to 40-mA (Constant-Current Sink) D D
Drive Capability x 12 Bits Output Count into 24-Pin HTSSOP Package 1024 Gray-Scale Display (PWM Control 1024 Steps) with Max 25-MHz Clock Frequency 3-Way Brightness Adjustment – Plane Brig |  Secos | mosfet |
| 2 | 15N10 | 100V (D-S) N-CHANNEL POWER MOSFET Actions Semiconductor Co., Ltd. 5-Function Remote Controller TX2C ATS302T/RX2C ATS302R
珠海炬力集成电路设计有限公司
Actions Semiconductor Co., Ltd.
TX2C ATS302T/RX2C ATS302R Data Sheet
Version 1.02
Shenzhen Office: Tel: 86-755-82211737 Fax: 86-755-82211771 Hong Kong Office: Tel: 85 |  Unisonic Technologies | mosfet |
15N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 15N03GH | AP15N03GH AP15N03GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 80mΩ 15A
Description
The TO-252 package is universally preferred for all commercialindustr  Advanced Power Electronics data | | |
| 2 | 15N03H | AP15N03H AP15N03H/J
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 80mΩ 15A
▼ Fast Switching
G S
Description
The TO-252 package is universally preferred for all commercialindustrial Advanced Power Electronics data | | |
| 3 | 15N03K | AP15N03K
AP15N03H/J
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 80mΩ 15A
Description
The TO-252 package is universally preferred for all c Advanced Power Electronics data | | |
| 4 | 15N03L | IPP15N03L IPP15N03L IPB15N03L OptiMOS® Buck converter series
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 12.6 42
P- TO220 -3-1
V mΩ A
• Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistanc  Infineon Technologies AG data | | |
| 5 | 15N05 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
15N05
·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 50V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.14Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch regulators ·Switching  Inchange Semiconductor mosfet | | |
| 6 | 15N06 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
15N06
·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.14Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch regulators ·Switching Inchange Semiconductor mosfet | | |
| 7 | 15N06 | 60V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 15N06
15A, 60V N-CHANNEL POWER MOSFET
DESCRIPTION
1 1
Power MOSFET
TO-220
The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM Unisonic Technologies mosfet | |
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