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PDF IHW30N110R3 Data sheet ( Hoja de datos )
| Número de pieza | IHW30N110R3 | |
| Descripción | ReverseconductingIGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IHW30N110R3 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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InductionHeatingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW30N110R3
Datasheet
IndustrialPowerControl
Free Datasheet http://www.Datasheet4U.com
1 page  
InductionHeatingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.50mA
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.70mA,VCE=VGE
VCE=1100V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=30.0A
IHW30N110R3
min.
Value
typ.
max. Unit
1100 -
-V
-
-
1.55 1.75
1.85 -
V
- 2.00 -
-
-
1.35 1.55
1.38 -
V
- 1.41 -
5.1 5.8 6.4 V
- - 5.0 µA
- - 2500.0
- - 100 nA
- 15.0 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=880V,IC=30.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 1460 -
- 55 - pF
- 45 -
- 180.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
Fall time
Turn-off energy
td(off)
tf
Eoff
Tvj=25°C,
VCC=600V,IC=30.0A,
VGE=0.0/15.0V,
rG=15.0Ω,Lσ=80nH,
Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
min. typ. max. Unit
- 350 - ns
- 16 - ns
- 1.15 - mJ
5 Rev.1.3,2013-02-12
Free Datasheet http://www.Datasheet4U.com
5 Page 
InductionHeatingSeries
IHW30N110R3
16
220V
880V
14
12 1000
Ciss
Coss
10 Crss
8
6 100
4
2
0
0 40 80 120 160
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=30A)
10
200 0
10 20 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11
D=0.5
D=0.5
0.2 0.2
0.1 0.1 0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse
single pulse
0.01 0.01
0.001
1E-6
1E-5
i: 1 2 3 4
ri[K/W]: 4.5E-3 0.1058 0.152 0.1827
τi[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178
1E-4 0.001 0.01 0.1
tp,PULSEWIDTH[s]
1
Figure 19. IGBTtransientthermalimpedance
(D=tp/T)
0.001
1E-6
1E-5
i: 1 2 3 4
ri[K/W]: 4.5E-3 0.1058 0.152 0.1827
τi[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178
1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
11
Rev.1.3,2013-02-12
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IHW30N110R3.PDF ] | |
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